Si Oxynitridation with Helicon-Wave Excited Nitrogen Plasma: Effects of Plasma Divergence and Concentration on Substrates

Abstract

Si was oxynitrided with helicon-wave excited \Nii and Ar mixed plasma. The flow-rate ratio (\Nii :Ar) was kept constant (8:2). Oxynitridations were performed in two growth geometries in which plasma was either concentrated on the substrate or diverged from the substrate using permanent magnets. In the case of plasma concentration, relatively uniform Si oxynitride (probably \Sii \Nii O) was formed throughout the entire depth of the film. In the case of plasma divergence, however, only Si oxide was grown. Therefore, the presence of nitrogen ions is concluded to be essential for oxynitridation of Si.