Si MAGFETs optimized for sensitivity and noise properties

Mathieu, N.; Giordano, Paolo Robuffo; Chovet, A.

doi:10.1016/0924-4247(92)80059-c

Cited by 25 publications

(11 citation statements)

References 9 publications

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“…In these systems, Si Hall elements are used instead of InSb and GaAs because of the compatibility between the Hall elements and the circuitry. By using the submicrometer complementary metal–oxide–semiconductor (CMOS) fabrication process, the size of Si Hall elements has been getting smaller . In previous works , two‐dimensional magnetic field distribution from a Nd–Fe–B rare‐earth permanent magnet was successfully measured by a two‐dimensional magnetic sensor which consisted of 6.6 × 6.6 μm 2 Si Hall elements placed in a 25 × 25 μm 2 pixel (pixel means the sensor pitch).…”

Section: Introductionmentioning

confidence: 99%

Size‐reduced two‐dimensional integrated magnetic sensor fabricated in 0.18‐μm CMOS process

Kimura

Uno

Masuzawa

2015

IEEJ Transactions Elec Engng

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Two‐dimensional integrated magnetic sensors have been investigated in order to reduce their size for use in a magnetic self‐levitation motor. The two‐dimensional integrated magnetic sensor investigated in this paper is composed of a 16 × 16 array of Hall sensors and fabricated by a 0.18‐μm complementary metal–oxide–semiconductor (CMOS) standard process. The sizes of the Hall elements are 1 × 1, 2 × 2, 3 × 3, and 6 × 6 μm2. Hall element of dimension 1 × 1 μm2was the minimum size in the fabrication process rule. The dimension of one pixel in which the Hall element was embedded was 20 × 20 μm2. The average sensitivity of the arrayed Hall sensors at four sizes was about 0.140 mV/mT with a DC magnetic field. The product sensitivity at four sizes of Hall sensors was about 0.089 mV/(mA·mT), which is better than that of our previous work. Degradation of the product sensitivity was not seen in reduced‐size Hall elements. These results reveal that a Hall element of size 1 × 1 μm2 has enough sensitivity for sensing the impeller position of a magnetically suspended motor. © 2015 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

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Section: Introductionmentioning

confidence: 99%

Size‐reduced two‐dimensional integrated magnetic sensor fabricated in 0.18‐μm CMOS process

Kimura

Uno

Masuzawa

2015

IEEJ Transactions Elec Engng

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“…The resulting MAGFET was found to have an approximate transfer function given by Eq. (2). (2) where 0 is defined in Figure 1, Iovv is equal to the differential offset current and B z,mAc (0) is the magnetic flux in the vertical direction at the MAGFET.…”

Section: The Magfet Transistormentioning

confidence: 99%

A silicon potentiometer for hearing aids

Kaulberg

Bogason

1996

Analog Integr Circ Sig Process

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An angledetector with a digital output is described. The component is meant as an alternative to the traditional slide potentiometer used as volume control in many hearing aid applications. The component is based on the use of magnetic field sensitive MOSFET's (MAGFET's) detecting the position of a tiny bar magnet placed above a silicon chip. Because of the galvanic separation between the anglesetting bar magnet and the electrical circuit, this component is insensitive to the rather hostile environment hearing aids are exposed to. The lifetime of the component is thereby increased significantly. The electrical circuit contains a switched current A/D-D/A conversion system for offset compensating the MAGFET's and for converting the MAGFET signal currents into a digital output proportional to the input angle. The system can operate with a supply voltage down to 2.3 V. The average current consumption is 1.5/xA. The peak current is close to 160/zA. The system operates correctly within the clock frequency range of 5 Hz to 25 kHz. It is implemented using a commercially available 1.5/zm CMOS process.

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“…is currently known as MAGFETs [1][2][3][4] . However, MAGFETs are magnetic sensors using the lateral Hall effect.…”

Section: Introductionmentioning

confidence: 99%

Modification of the Drain Current on a Metal-Oxide-Semiconductor Field-Effect Transistor with Ferrite Gate Oxide

et al. 2006

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(Mn 0.24 Zn 0.09 Fe 0.67 )Fe 2 O 4 (MZF) thin films were grown on Si substrates without and with MOSFETs by pulsed laser deposition (PLD). The deposition of MZF films was carried out by the following two procedures: (1) "1-step deposition," in which 300-nm-thick MZF film was deposited at 800 o C, and (2) "2-step deposition," in which 10-nm-thick MZF film was deposited at 800 o C and 300-nm-thick MZF film was deposited at 27 o C followed by post-deposition annealing at 800 o C for 1 h under an O 2 pressure of 1.3 x 10 -3 Pa. For both preparation procedures, epitaxial growth of MZF thin film with (111)-orientation was observed. The saturation and remanent magnetization of MZF thin film depends on the preparation procedure, and the highest magnetization was obtained for film prepared by 1-step deposition. A microfabrication process in which preparation of MZF thin film was limited to the gate areas of Si-MOSFETs was attempted, using a combination of the abovementioned processes and etching processes: (1) 1-step deposition followed by wet chemical etching, and (2) 2-step deposition. In the 2-step deposition, a lift-off process was inserted before 27 o C deposition. I D -V DS characteristics before and after magnetization of the MZF thin film was measured. As a result, modification of the drain current was observed. The modification was brought about by the Lorentz force, which was caused by the magnetic field induced by remanent magnetization. For MZF/Si-MOSFETs fabricated by 1-step deposition, the modification of the drain current was on the order of several µA when the gate voltage was 5 V. For MZF/Si-MOSFETs fabricated by 2-step deposition, the modification of the drain current was on the order of a few dozen pA when the gate voltage was 0.8 V. It was also clarified that the degree of modification increases with decreasing gate length. These results suggest that this principle could be used in a novel nonvolatile memory application.

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Si MAGFETs optimized for sensitivity and noise properties

Cited by 25 publications

References 9 publications

Size‐reduced two‐dimensional integrated magnetic sensor fabricated in 0.18‐μm CMOS process

Size‐reduced two‐dimensional integrated magnetic sensor fabricated in 0.18‐μm CMOS process

A silicon potentiometer for hearing aids

Modification of the Drain Current on a Metal-Oxide-Semiconductor Field-Effect Transistor with Ferrite Gate Oxide

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