Si(Li) detector with ultra-thin entrance window on the diffusive lithium side

Abstract

Present work reports the results of activities intended to reach thin Si(Li) detector entrance window on the diffusive lithium layer side. It was established that the new n-contact represented by a heterostructure of unalloyed amorphous n-type silicon a-Si:H allows one to achieve the entrance window thickness 3 – 4 orders of magnitude smaller than the lithium-side entrance window of standard Si(Li) detectors. The films of amorphous silicon were synthesized with MASD (magnetron assisted silane decomposition) method in mixture of SiH4 (25%) and Ar (75%) gases. Lithium layer surface resistivity and silicon target type (n- or p-) affection on electrical properties of Si(Li) detector contact produced were studied. The investigation performed had led to a technology of Si(Li) detector production with thickness of the entrance window on the diffusive lithium layer side below 0.1 µm.

A Silicon 4π Spectrometer of β-Decay Electrons with Energies of up to 3 MeV

“…Silicon Lithium (Si(Li) -lithium doped silicon) detectors were fabricated from a single-crystal p-type silicon with specific resistivity of 4 kΩ/cm and mean carrier lifetime of 800 s, using a standard well-proven process, developed at Petersburg Nuclear Physics Institute NRC KI. Detailed specifications for such detectors may be found in [9,10,16].…”

Precision measurement of $^{\mathbf{210}}$Bi $β$-spectrum

“…The layout of the β-spectrometer used was based on simple "target-detector" geometry [3,4]. The Si(Li) detector with sensitive region with diameter of 15.1 mm and thickness of 6.6 mm was produced by standard diffusiondrift technology [21]. Since the detector sensitive region does not cover the whole detector, it was fitted with a tungsten collimator with diameter of 14 mm that guarantees that an electron falling on the detector is either backscattered or stopped in the i-region of the detector.…”