Abstract:We demonstrate the novel operation of a Si/Ge-based avalanche photodiode (APD) for the direct generation of ultra-wideband (UWB) frequency comb lines for impulse radio (IR) wireless communication. By applying a dc bias (V bias ) over the breakdown voltage (V br ) of the APD, the device can exhibit a significant resonant frequency without any optical signal illumination, and function as an impact ionization avalanche transit time diode-based oscillator. Under an additional electrical intermediate frequency (IF)… Show more
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