Si etching rate calculation for low pressure high density plasma source using Cl2 gas

Abstract

Articles you may be interested inAngular dependence of Si 3 N 4 etch rates and the etch selectivity of Si O 2 to Si 3 N 4 at different bias voltages in a high-density C 4 F 8 plasma Effects of gas distribution on polysilicon etch rate uniformity for a low pressure, high density plasma Based on a simplified Cl 2 plasma Si etching mechanism, we calculate the Si etching rate with a comprehensive analysis of the effect of ion bombardment. With its flux distribution, the bombarding ions are regarded as the sum of independent monoenergetic beams ͑SIMB͒ approach. The Si etching rate is examined over the radio-frequency ͑rf͒ frequency ( rf ) range from 1 to 20 MHz (0.1 pi Շ rf Շ2 pi , where pi is the ion plasma frequency͒ under the typical low pressure high density plasma condition. To consolidate the SIMB approach, the etching rate is compared with the result from the monoenergetic single ion beam approach. The difference in the Si etching rate between the two approaches is notable at a low rf frequency range. The effect of threshold energy on the Si etching mechanism is also investigated. We conclude that under a low rf frequency, for a precise etching property examination, the effect of the bombarding ions should be investigated through the SIMB approach.

Atomic-scale silicon etching control using pulsed Cl2 plasma

“…1,16,17,[19][20][21][22][23][24][25][26][27][28][29] It has been shown that the top surface of silicon is quickly covered by a mixed SiCl x layer, mostly made of SiCl. 1,16,17,[19][20][21][22][23][24][25][26][27][28][29] It has been shown that the top surface of silicon is quickly covered by a mixed SiCl x layer, mostly made of SiCl.…”