Si-doped zinc oxide transparent conducting oxides; nanoparticle optimisation, scale-up and thin film deposition

Howard, Dougal P.; Marchand, Peter; Carmalt, Claire J.; Parkin, Ivan P.; Darr, Jawwad A.

doi:10.1039/c7tc02175e

Cited by 11 publications

(2 citation statements)

References 41 publications

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“…The excess electrons in Si-doped ZnO cause it to have higher carrier density than indium doping, which leads to improved mobility of Si-doped ZnO (10−30 cm 2 /V s) than ZnO films (∼11 cm 2 /V s). 36 Similarly, in this work, the Mn dopant is also incorporated in the +4 oxidation state within the ZnO lattice, which gives two free electrons for each Mn Zn defect state produced, which is well-matched with our SCLC mobility measurements (discussed later).…”

Section: Resultssupporting

confidence: 80%

“…Howard et al studied the role of Si 4+ incorporation in the ZnO lattice for TCO applications, and they revealed that the Si Zn defect in the ZnO lattice results in two free electrons being generated unlike doping with trivalent dopants (In 3+ ) which gives only one free electron. The excess electrons in Si-doped ZnO cause it to have higher carrier density than indium doping, which leads to improved mobility of Si-doped ZnO (10–30 cm 2 /V s) than ZnO films (∼11 cm 2 /V s) . Similarly, in this work, the Mn dopant is also incorporated in the +4 oxidation state within the ZnO lattice, which gives two free electrons for each Mn Zn defect state produced, which is well-matched with our SCLC mobility measurements (discussed later).…”

Section: Resultsmentioning

confidence: 99%

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Manganese Dopant-Induced Isoelectric Point Tuning of ZnO Electron Selective Layer Enable Improved Interface Stability in Cesium–Formamidinium-Based Planar Perovskite Solar Cells

Rajendran

Ganesan

Menon

et al. 2022

ACS Appl. Energy Mater.

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The higher basicity and uncontrolled defect states in the planar zinc oxide (ZnO) electron selective layer (ESL) cause rapid deprotonation of the perovskite absorber which results in higher interface charge recombination at the perovskite/ESL interface restricting the usage of ZnO as the ESL in perovskite solar cells. In this work, the isoelectric point (IEP) of ZnO was tuned by introducing a manganese (Mn4+) dopant in ZnO for the first time. The higher oxidation state of the Mn dopant reduces the basicity of the doped ZnO ESL and controls the perovskite deprotonation at the Mn:ZnO/perovskite interface. The doping of Mn4+ in ZnO results in the generation of two free electrons causing higher conductivity of Mn:ZnO films. The dual effect of a lower IEP and higher conductivity of the Mn:ZnO film along with its improved n-type behavior results in higher surface photovoltage and reduced trap-filled limited voltage (V TFL), which resulted in a higher open-circuit voltage (V oc) (0.92 to 0.99 V). The negligible PbI2 formation at the Mn:ZnO/perovskite interface, lower leakage current (1 order lower than that of ZnO), and a comparatively reduced diode ideality factor (n id) validate the improvement of perovskite/interface stability. The above-mentioned merits of the Mn-doped ZnO-based ESL improved the mixed-cation perovskite power conversion efficiency from 11.7 to 13.6%, which is ∼15% higher than that of a bare ZnO-based ESL. Furthermore, a considerably improved device stability of over 100 h under high relative humidity condition (RH >70%) was observed for the Mn-doped ZnO ESL without any encapsulation.

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Section: Resultssupporting

confidence: 80%

Section: Resultsmentioning

confidence: 99%

Manganese Dopant-Induced Isoelectric Point Tuning of ZnO Electron Selective Layer Enable Improved Interface Stability in Cesium–Formamidinium-Based Planar Perovskite Solar Cells

Rajendran

Ganesan

Menon

et al. 2022

ACS Appl. Energy Mater.

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show abstract

Two is better than one: catalytic, sensing and optical applications of doped zinc oxide nanostructures

Vinitha¹,

Preeyanghaa

Vasanthakumar

et al. 2021

emergent mater.

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pH-controlled surface engineering of nanostructured ZnO films generated via a sustainable low-temperature H2O oxidation process

Pelicano

Yanagi

2019

Applied Surface Science

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Si-doped zinc oxide transparent conducting oxides; nanoparticle optimisation, scale-up and thin film deposition

Abstract: Si-doped ZnO was made by a continuous hydrothermal method and deposited by spin coating; ρ = 2.4 × 10−3 Ω cm, Tvis > 80%.

Cited by 11 publications

References 41 publications

Manganese Dopant-Induced Isoelectric Point Tuning of ZnO Electron Selective Layer Enable Improved Interface Stability in Cesium–Formamidinium-Based Planar Perovskite Solar Cells

Manganese Dopant-Induced Isoelectric Point Tuning of ZnO Electron Selective Layer Enable Improved Interface Stability in Cesium–Formamidinium-Based Planar Perovskite Solar Cells

Two is better than one: catalytic, sensing and optical applications of doped zinc oxide nanostructures

pH-controlled surface engineering of nanostructured ZnO films generated via a sustainable low-temperature H2O oxidation process

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