2021
DOI: 10.1007/s11082-021-02884-1
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Si-based photodiode and material characterization of TiO2 thin film

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Cited by 10 publications
(2 citation statements)
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“…As a result, the accurate measurement reached a mean grain height of 11 nm. Kaplan (2021) [10] researched the Si photodiode and material characterization of TiO 2 and proposed a different technique to measure the height with an AFM. The result was 3 nm high, and the accuracy was significant.…”
Section: Introductionmentioning
confidence: 99%
“…As a result, the accurate measurement reached a mean grain height of 11 nm. Kaplan (2021) [10] researched the Si photodiode and material characterization of TiO 2 and proposed a different technique to measure the height with an AFM. The result was 3 nm high, and the accuracy was significant.…”
Section: Introductionmentioning
confidence: 99%
“…TVA system is plasma assistant coating technology working in high vacuum conditions. TVA is not used to deposit many materials [27][28][29][30][31] but also coats the two dimensional nano materials such as BN, graphene and MXene materials. 22,32,33 2D nano materials exhibit improved properties in special applications.…”
mentioning
confidence: 99%