Si-based multi-finger N-MODFET RF power devices

Abstract

We report, for the first time, on the fabrication and characterizations of multi-finger n-type Si/SiGe modulation doped FETs (MODFET) for RF power amplifications. Under bias of V DS =5V, V GS =0V and continuous wave operation, load-pull measurements at 2 GHz from a 10-finger n-MODFET with a gate width of 500 (750) µm show that a maximum output power of 12 (14) dBm, power gain at 1 dB compression of 15 (16) dB, and maximum power added efficiency of 12 (15) % of MODFET device have been achieved. Index Terms -Load-pull, MODFET, power device, RF, SiGe.