Si-based emissive microdisplays

Jaguiro, P.; Katsuba, P. S.; Lazarouk, S. K.; Farmer, Michael; Smirnov, A.

doi:10.1016/j.physe.2008.08.002

Cited by 11 publications

(2 citation statements)

References 12 publications

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“…A potential breakthrough in this area has occurred in 1990 when quantum effects and room temperature visible luminescence were first demonstrated in PS layers [10]. This feature awoke the researchers´ interest worldwide, and soon the first porous silicon-based light emission diode (avalanche reverse biased Schottky diode) emerged, made possible via silicon nanostructuring [11].…”

Section: Ito-free Led Microdisplays Based On Thin Sponge-like Nanopor...mentioning

confidence: 99%

27‐1: Invited Paper: Nanocomposites and Alloys Based on Porous Silicon Filled with Metals and Semiconductors

Grevtsov,

Lopato,

Dolgyi

et al. 2024

Symp Digest of Tech Papers

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A variety of micro‐ and nanocomposite materials based on electrochemically‐acquired porous silicon are produced and evaluated in terms of their applicability to display technology. It is shown that porous silicon provides a versatile and well‐adjustable template for filling with other materials, which can outright change its electrophysical parameters. While, in terms of display applications, porous silicon layers are mostly prominent for their photohiminescence not akin to monocrystalline silicon, this property can be additionally enhanced by employing a variety of electrochemical techniques to form metal deposits of certain shapes.

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Section: Ito-free Led Microdisplays Based On Thin Sponge-like Nanopor...mentioning

confidence: 99%

27‐1: Invited Paper: Nanocomposites and Alloys Based on Porous Silicon Filled with Metals and Semiconductors

Grevtsov,

Lopato,

Dolgyi

et al. 2024

Symp Digest of Tech Papers

Self Cite

View full text Add to dashboard Cite

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“…Porous silicon avalanching electroluminescent devices were viewed as quite promising for microdisplay applications, especially since the internal quantum efficiencies achieved were relatively high. 3,4 However, porous silicon is a very reactive material and the long term stability of porous silicon microdisplays is problematic, 5 leading to reliability issues and short lifetimes. The porous silicon technology is also not fully compatible with the mature complementary metaloxide semiconductor (CMOS) technology.…”

Section: Introductionmentioning

confidence: 99%

An <inline-formula><math display="inline" overflow="scroll"><mrow><mn mathvariant="bold">8</mn><mo mathvariant="bold">×</mo><mn mathvariant="bold">64</mn></mrow></math></inline-formula> pixel dot matrix microdisplay in 0.35-μm complementary metal-oxide semiconductor technology

Venter

2012

Opt. Eng

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Abstract. Microdisplay technologies for near-to-eye applications mostly use a complementary metal-oxide semiconductor (CMOS) processing chip as backplane for pixel addressing, with extensive post-processing on top of the CMOS chip to deposit organic LED or liquid crystal layers. Here, we examine the possibility of integrating emissive microdisplays within the CMOS chip, with absolutely no post processing needed. This will dramatically reduce the manufacturing cost of microdisplays and may lead to new microdisplay applications. Visible electroluminescence is achieved by biasing pn junctions into avalanche breakdown mode. The most appropriate CMOS pn junction is selected and innovative techniques are applied to increase the light extraction efficiency from the CMOS chip using the metal layers of the CMOS process. An 8 × 64 dot matrix microdisplay was designed and manufactured in a 0.35-μm CMOS technology. The experimental results show that a luminance level of 20 cd∕m 2 can be reached, which is an adequate luminance value in order to comfortably read data being displayed in relatively dark environments. The electrical power dissipation per pixel being activated is 0.9 mW∕pixel. It is also shown that the pixels can be switched at a rate faster than 350 MHz.

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OLED and Other Emissive Microdisplays

Underwood¹

2016

Handbook of Visual Display Technology

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Si-based emissive microdisplays

Cited by 11 publications

References 12 publications

27‐1: Invited Paper: Nanocomposites and Alloys Based on Porous Silicon Filled with Metals and Semiconductors

27‐1: Invited Paper: Nanocomposites and Alloys Based on Porous Silicon Filled with Metals and Semiconductors

An <inline-formula><math display="inline" overflow="scroll"><mrow><mn mathvariant="bold">8</mn><mo mathvariant="bold">×</mo><mn mathvariant="bold">64</mn></mrow></math></inline-formula> pixel dot matrix microdisplay in 0.35-μm complementary metal-oxide semiconductor technology

OLED and Other Emissive Microdisplays

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