1995
DOI: 10.1103/physrevlett.74.2710
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Si(001) Step Dynamics

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Cited by 89 publications
(37 citation statements)
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“…Previously, kinetic parameters relevant to silicon crystal growth have been mainly extracted indirectly from comparison of the prediction of growth models with observed surface morphology [3]. In principle STM imaging can provide direct information about kinetic processes [7][8][9], but such experiments are limited by the rate at which dynamic events can be resolved and the results could be strongly influenced by the applied electric fields during STM imaging. Detailed and careful measurements of some atomic transitions on the Si(100) surface are needed to test various theoretical approaches.…”
mentioning
confidence: 99%
“…Previously, kinetic parameters relevant to silicon crystal growth have been mainly extracted indirectly from comparison of the prediction of growth models with observed surface morphology [3]. In principle STM imaging can provide direct information about kinetic processes [7][8][9], but such experiments are limited by the rate at which dynamic events can be resolved and the results could be strongly influenced by the applied electric fields during STM imaging. Detailed and careful measurements of some atomic transitions on the Si(100) surface are needed to test various theoretical approaches.…”
mentioning
confidence: 99%
“…Depending on the preparation and the miscut angle of the surface, both types of steps appear either as single-height steps (S A or S B steps) or double-height steps (D A or D B steps). As can be seen from STM measurements, the S A step is straight, as opposed to the rough S B step [20,21].…”
Section: Resultsmentioning
confidence: 88%
“…This scenario obviously places a lot of emphasis on the role of steps, since it is typically at the steps where the diffusing particles are created. A great number of studies have focused on the dynamics of steps [8][9][10][11][12][13][14][15]. Even without observing the actual atomic processes, from the dynamics of steps and islands it can be established which atomic processes (e.g.…”
Section: The Role Of Vacancies In Surface Diffusionmentioning
confidence: 99%
“…Again taking the example of Cu(0 0 1), using calculations based on the embedded atom method (EAM), we estimate the diffusion barrier for surface vacancies to be 350 meV [28]. Assuming an attempt frequency of 10 12 Hz, this energy gives a vacancy hop rate of 1.3 MHz at room temperature. The product of this high number and the low vacancy density estimated above, of approximately 10 −2 Hz is the frequency with which we estimate each site on the surface to be visited by a vacancy at room temperature.…”
Section: Can Surface Vacancies Be Important?mentioning
confidence: 99%