Shubnikov–de Haas oscillations in the bulk Rashba semiconductor BiTeI

Bell, C. H.; Bahramy, M. S.; Murakawa, H.; Checkelsky, Joseph; Arita, Ryotaro; Tokunaga, Masashi; Kohama, Yoshimitsu; Nagaosa, Naoto; Tokura, Y.; Hwang, Harold Y.

doi:10.1103/physrevb.87.081109

Cited by 33 publications

(37 citation statements)

References 19 publications

(13 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In contrast to the pressure-independent ρ yx , ρ xx is steadily reduced with increasing pressure. In addition, ρ xx shows clear SdH oscillations with two different periods with 1/B, as also reported in previous studies at ambient pressure [25][26][27]. Oscillations with a longer period in the low magnetic field region correspond to IFS, and those with a shorter period in the high-field region originate from OFS [ Fig.…”

supporting

confidence: 58%

“…More recently, a bulk (three-dimensional) polar semiconductor BiTeI has been shown to host a large Rashba-type spin-split bulk band structure [21]. Similar to the case of TIs, ARPES [21][22][23][24] and magnetotransport [25][26][27] have identified several salient features that point to the unique role of SOI in the electronic properties of these materials. It is widely expected that more exotic phases may exist also at the nexus of such bulk polar materials.…”

mentioning

confidence: 95%

See 1 more Smart Citation

Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI

et al. 2014

Self Cite

View full text Add to dashboard Cite

BiTeI is a polar semiconductor with gigantic Rashba spin-split bands in bulk. We have investigated the effect of pressure on the electronic structure of this material via magnetotransport. Periods of Shubunikov-de Haas (SdH) oscillations originating from the spin-split outer Fermi surface and inner Fermi surface show disparate responses to pressure, while the carrier number derived from the Hall effect is unchanged with pressure. The associated parameters which characterize the spin-split band structure are strongly dependent on pressure, reflecting the pressure-induced band deformation. We find the SdH oscillations and transport response are consistent with the theoretically proposed pressure-induced band deformation leading to a topological phase transition. Our analysis suggests the critical pressure for the quantum phase transition near P c = 3.5 GPa. The spin-orbit interaction (SOI) plays a central role in determining the behavior of electrons in solids. In addition to the SOI-related subjects of spintronics, such as generation, manipulation, and detection of spin information, there has recently been an intense focus on the effect of the SOI on the electronic band structure itself. In particular, an extremely large SOI in small gap semiconductors has been shown theoretically [1][2][3][4] and experimentally [5][6][7] to give rise to a new exotic state of matter known as the topological insulator (TI). As probed by numerous experiments including angle resolved photoemission spectroscopy (ARPES) [6,7] and magnetotransport [8][9][10][11][12], this bulk insulating phase hosts metallic surface states composed of spin-polarized Dirac fermions, attracting both fundamental and technological interest [13,14].The spin texture in the momentum space of the TI surface state is analogous to a Rashba-type spin structure [15]. A Rashba-type structure can be expected in a system with broken inversion symmetry so that electrons are subject to an effective SOI driven k-dependent Zeeman field perpendicular to both the polar axis and crystal momentum [15]. This effect in TIs and other Rashba-type materials lifts spin degeneracy in the Fermi surface, resulting in a chiral spin texture. Historically, this effect has been studied in surface [16][17][18] and interface [19] systems and more recently for the surface of TIs [20], where such a breaking of inversion symmetry naturally arises. More recently, a bulk (three-dimensional) polar semiconductor BiTeI has been shown to host a large Rashba-type spin-split bulk band structure [21]. Similar to the case of TIs, ARPES [21][22][23][24] and magnetotransport [25][26][27] have identified several salient features that point to the unique role of SOI in the electronic properties of these materials. It is widely expected that more exotic phases may exist also at the nexus of such bulk polar materials.It was recently predicted by first-principles calculations that BiTeI shows a topological transition under pressure [28]. Figure 1 shows the evolution of the band structure of BiTeI with the app...

show abstract

supporting

confidence: 58%

mentioning

confidence: 95%

Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI

et al. 2014

Self Cite

View full text Add to dashboard Cite

show abstract

“…The experimental techniques of preference to investigate this new class of Rashba systems have been magnetotransport [19][20][21], which via the Shubunikov-de Haas effect can detect separately the oscillations of the inner and outer Fermi surfaces and therefore prove the presence of a non-trivial Berry's phase, optical spectroscopy [20,[22][23][24], and angle-resolved photoemission (ARPES) [11,[15][16][17][25][26][27]. The last one, main focus of this paper, is particularly powerful as it provides a direct view of the band structure of materials.…”

Section: Introductionmentioning

confidence: 99%

Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl)

Moreschini

Autès

Crepaldi

et al. 2015

Journal of Electron Spectroscopy and Related Phenomena

View full text Add to dashboard Cite

a b s t r a c tWe present an overview of the new family of semiconductors BiTeX (X = I, Br, Cl) from the perspective of angle resolved photoemission spectroscopy. The strong band bending occurring at the surface potentially endows them with a large flexibility, as they are capable of hosting both hole and electron conduction, and can be modified by inclusion or adsorption of foreign atoms. In addition, their trigonal crystal structure lacks a center of symmetry and allows for both bulk and surface spin-split bands at the Fermi level. We elucidate analogies and differences among the three materials, also in the light of recent theoretical and experimental work.

show abstract

“…Most electrical transport studies have focused on measurements at high magnetic fields to detect Shubnikovde Haas or quantum oscillations [10,11,16,17]. Probably, this is because Shubnikov-de Haas or quantum oscillations are considered to be few experimental techniques to provide essential information about nontrivial Berry phase in this system [10,11].…”

Section: (A) Dynamics Of Electrons On the Innermentioning

confidence: 99%

Interplay between disorder and inversion symmetry: Extreme enhancement of the mobility near the Weyl point in BiTeI

et al. 2015

View full text Add to dashboard Cite

show abstract

Shubnikov–de Haas oscillations in the bulk Rashba semiconductor BiTeI

Cited by 33 publications

References 19 publications

Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI

Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI

Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl)

Interplay between disorder and inversion symmetry: Extreme enhancement of the mobility near the Weyl point in BiTeI

Contact Info

Product

Resources

About