Shubnikov-de Haas effects in Bi2Se3 with high carrier concentrations

Investigation of the conduction band fermi surface in Bi2Se3 at high electron concentrations

“…1 is rather unreliable already a t 2.2 x 1019 om4. The more it is for an electron concentration of 9 X 1019 ~r n -~ as done in [15], and without regard of the results for 6 between 0 and *45", which are differently influenced by trigonal warping of the Fermi surface. by trigonal warping with inversion symmetry in this arrangement, while mirror symmetry, which should show an angular period of 60" in this arrangement, is excluded.…”

The Shubnikov–de Haas Effect in Semiconductors: A Comprehensive Review of Experimental Aspects

“…Non-stoichiometry causes η-type conduction, and, as a result, all SdH work has only been carried out on η-type samples with η ranging from 3 χ 10 17 to 9 χ 10 19 cm~3. Subsequently, a few additional SdH studies were carried out (Hyde et al 1973, Kohler 1973a, b, Kohler and Wuchner 1975, Kohler and Fischer 1975. Up to electron concentrations of 10 18 cm" 3 , the Fermi surface is almost a single ellipsoid of revolution along the trigonal axis; whereas at higher densities, a trigonal warping distorts the surface ( Kohler and Fischer 1975).…”

Spin-Orbit induced phase-shift in Bi2Se3 Josephson junctions

“…20 . For weak α , highly transparent interfaces and neglecting spin-relaxation, the anomalous phase shift is given by the relation:where τ = 0.13 ps is the elastic scattering time, is the diffusion constant and m * = 0.25 m e is the effective electron mass 38 .…”

“…where τ = 0.13 ps is the elastic scattering time, D = 1 3 v 2 F τ = 40 cm 2 s −1 is the diffusion constant and m * = 0.25 m e is the effective electron mass 38 .…”