Shubnikov-de Haas effect study of InAs after transmutation doping at low temperatures

Abstract

Degenerate InAs single crystals have been irradiated by thermal neutrons below 6 K. The Shubnikov-de Haas effect and the electrical resistivity have been measured as a function of the neutron dose and the annealing temperature. The effects of transmutation doping and simultaneous introduction of lattice defects have been analysed in terms of the conduction electron density and the scattering rates tau p-1=pne2/m* and tau x-1=2 pi kBX/h(cross) (where X is the Dingle temperature). The measured conduction electron density after irradiation and the thermal annealing agreed well with the values calculated from the experimental and materials parameters. The effects of radiation damage may qualitatively be explained assuming neutral In vacancies to be the most common type of defect in the thermal-neutron-irradiated InAs. A comparison with similar experiments on InSb is given.