Shot-Noise-Induced Random Telegraph Noise in Shuttle Current

Nishiguchi, Norihiko

doi:10.1103/physrevlett.89.066802

Cited by 29 publications

(30 citation statements)

References 14 publications

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“…The generating function and the probability in this case is −S to (χ) = n e iχ − 1 and P to (n) = e −n n n n! , (16) with n the average number of charges transmitted during the time t o . A general feature of the generating function is the 2π periodicity.…”

Section: Analytical Limits For Small and Large Amplitude A Statmentioning

confidence: 99%

“…Other authors considered the finite frequency noise in superconducting shuttles 14 or the telegraph noise induced by the switching between two mechanical modes in a two-oscillatinggrains device. 16 A related problem is the fluctuation of the acoustoelectric current carried by surface acoustic waves propagating along a ballistic quantum channel. 17 The full counting statistics (FCS) of charge transfer in a shuttle has not been considered so far.…”

Section: Introductionmentioning

confidence: 99%

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Full counting statistics of a charge shuttle

Pistolesi

2004

Phys. Rev. B

103

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We study the charge transfer in a small grain oscillating between two leads. Coulomb blockade restricts the charge fluctuations in such a way that only zero or one additional electrons can sit on the grain. The system thus acts as a charge shuttle. We obtain the full counting statistics of charge transfer and discuss its behavior. For large oscillation amplitude the probability of transferringñ electrons per cycle is strongly peaked around one. The peak is asymmetric since its form is controlled by different parameters forñ > 1 andñ < 1. Under certain conditions the systems behaves as if the effective charge is 1/2 of the elementary one. Knowledge of the counting statistics gives a new insight on the mechanism of charge transfer.

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Section: Analytical Limits For Small and Large Amplitude A Statmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Full counting statistics of a charge shuttle

Pistolesi

2004

Phys. Rev. B

103

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“…This elastic force is accompanied by a dissipative force, F γ (Ẋ) which is, as in [6,18], phenomenologically modeled as a viscous damping term…”

Section: B Grain Motionmentioning

confidence: 99%

“…Experimental shuttle related work has been reported on cantilevers that work as flexible tunneling contacts [7,8,9], singlemolecule transistors [10], colloidal particle systems [11], and macroscopic shuttle systems [12]. Theoretical work has included different aspects of classical shuttle systems [6,13,14,15,16], some noise and accuracy considerations [17,18], different aspects of quantum mechanical shuttle models [19,20,21,22,23,24], and shuttling of Cooper pairs in a superconducting shuttle system [25,26]. For a recent review, see Ref.…”

Section: Introductionmentioning

confidence: 99%

Impact of van der Waals forces on the classical shuttle instability

Nord

Isacsson

2004

Phys. Rev. B

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The effects of including the van der Waals interaction in the modelling of the single electron shuttle have been investigated numerically. It is demonstrated that the relative strength of the vdW-forces and the elastic restoring forces determine the characteristics of the shuttle instability. In the case of weak elastic forces and low voltages the grain is trapped close to one lead, and this trapping can be overcome by Coulomb forces by applying a bias voltage V larger than a threshold voltage Vu. This allows for grain motion leading to an increase in current by several orders of magnitude above the transition voltage Vu. Associated with the process is also hysteresis in the I-V characteristics.

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“…Experimental work in relation to EM-SET structures range from the macroscopic [5] to the micrometer scale [6][7][8] and down to the nanometer scale [9]. Various aspects of electronic transport in such systems have been theoretically investigated in a series of articles [11][12][13][14][15][16][17][18][19][20].…”

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confidence: 99%

Energy pumping in a quantum nanoelectromechanical system

Nord

Gorelik

2005

Low Temperature Physics

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Fully quantized mechanical motion of a single-level quantum coupled to two voltage biased electronic leads is studied. It is found that there are two different regimes depending on the applied voltage. If the bias voltage is below a certain threshold (which depends on the energy of the vibrational quanta) the mechanical subsystem is characterized by a low level of excitation. Above a threshold the energy accumulated in the mechanical degree of freedom dramatically increases. The distribution function for the energy level population and the current through the system in this regime is calculated. During the past few years experimental methods of physics has seen an advancing capability to manufacture smaller and smaller structures and devices. This has lead to many new interesting investigations of nanoscale physics. Examples include, for instance, observation of the Kondo effect in single-atom junctions [1], manufacturing of single-molecular transistors [2], and so on. There has also been a great interest in the promising field of molecular electronics [3]. One of the main features of the conducting nanoscale composite systems is its susceptibility to significant mechanical deformations. This results from the fact that on the nanoscale level the mechanical forces controlling the structure of the system are of the same order of magnitude as the capacitive electrostatic forces governed by charge distributions. This circumstance is of the utmost importance in the so called electromechanical single-electron transistor (EM-SET), which has been in focus of recent research. The EM-SET is basically a double junction system where the additional (mechanical) degree of freedom, describing the relative position of the central island, significantly influences the electronic transport. Experimental work in relation to EM-SET structures range from the macroscopic [5] to the micrometer scale [6][7][8] and down to the nanometer scale [9]. Various aspects of electronic transport in such systems have been theoretically investigated in a series of articles [11][12][13][14][15][16][17][18][19][20].In Ref. 4 and Ref. 15 it was, among other things, shown that coupling the mechanical degree of freedom of an EM-SET to the nonequilibrium bath of electrons constituted by the biased leads, can lead to dynamical self excitations of the mechanical subsystem and as a result bring the EM-SET to the shuttle regime of charge transfer. This phenomena is usually referred to as a shuttle instability. In these papers the grain dynamics are treated classically and the key issue is that the charge of the grain, q t ( ), is correlated with its velocity, &( ) x t , in a way so that the time average, q t x ( ) & ¹ 0. Decreasing the size of the central island in the EM-SET structure to the nanoscale level results in the quantization of its mechanical motion. Charge transfer in this regime was studied theoretically in Ref. 10. However, the strong additional dissipation in the mechanical subsystem suggested in this paper keeps the mechanical subsystem in t...

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Shot-Noise-Induced Random Telegraph Noise in Shuttle Current

Cited by 29 publications

References 14 publications

Full counting statistics of a charge shuttle

Full counting statistics of a charge shuttle

Impact of van der Waals forces on the classical shuttle instability

Energy pumping in a quantum nanoelectromechanical system

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