Shot-noise characteristics of triple-barrier resonant-tunneling diodes

Newaz, A. K. M.; Song, Woon; Méndez, E. E.; Lin, Yi‐Hsin; Nitta, Junsaku

doi:10.1103/physrevb.71.195303

Cited by 14 publications

(14 citation statements)

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“…For given bias voltages the current flows through a stack of vertical coupled InAs quantum dots [16]. Therefore we deal with 3d-0d-0d-3d tunneling in contrast to the * Electronic address: Barthold@nano.uni-hannover.de above-mentioned experimental studies where the tunneling takes place through a two-dimensional subband [15]. The QDs were prepared by growing InAs on AlAs, the lattice-mismatch of InAs and AlAs causes the formation of the pyramidal QDs (Stranski-Krastanov-growth).…”

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confidence: 99%

“…It was shown that an impurity which is only weakly coupled to the leads can modulate the tunneling current through a nearby impurity leading to enhanced shot noise [14]. Super-Poissonian noise also has been studied experimentally for triple-barrier resonant tunneling diodes [15]. In this paper we study the shot noise properties of resonant-tunneling through vertically coupled zerodimensional systems, so-called quantum dots (QDs).…”

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Enhanced Shot Noise in Tunneling through a Stack of Coupled Quantum Dots

et al. 2006

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Enhanced Shot Noise in Tunneling through a Stack of Coupled Quantum Dots

et al. 2006

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“…The first two terms describe the contributions into nano-system conductivity of electron wave currents from RTS left side B The further calculation and analysis of spectral parameters (RE and RW) of electron QSS and its conductivity σ g is performed for In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As RTS, often researched experimentally [3,4].…”

Section: Conductivity Of Mono-energy Electron Beam Of Cylindrical Twomentioning

confidence: 99%

“…Their elements are different nanostructures: quantum dots, wires and wells, in general and resonance tunnel structures (RTS), in particular. Growing interest to the latter is caused by the fact that after creation of the first quantum cascade (QC) lasers by J. Faist and F. Capasso [1,2], evident success is achieved in the design of active nano-structures [3,4], minimizing guided currents and reaching the maximal strength of electromagnetic radiation in the demanded range of frequencies (especially, in actual Terahertz ones).…”

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Electronic Conductivity in Open Cylindrical Two-Barrier Symmetric Resonance Tunnel Structure

et al. 2010

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The theory of resonance energies and widths of electron quasi-stationary states and electronic conductivity in open cylindrical two-barrier symmetric resonance tunnel structure is developed. The complete Schrodinger equation is solved within the model of effective masses for rectangular potential wells and barriers. Interaction between electrons and electromagnetic field was taken into account using the approximation of the small signal. The calculations of spectral parameters are performed for In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As resonance tunnel structure. The dependences of conductivity on the energy of mono-energy electrons beam falling at the system and electromagnetic field energy absorbed or emitted by the system are obtained and analyzed. The relation between experimentally measured parameters of conductivity and resonance widths of electron quasi-stationary states in open resonance tunnel structure is established.

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“…4,15,16 Here we propose to use magnetic resonant tunneling diodes ͑RTDs͒ comprising coupled magnetic QWs and three nonmagnetic barriers, as spintronic devices offering large magnetocurrents ͑MCs͒. Corresponding nonmagnetic three barrier structures have been experimentally studied, [17][18][19][20] while electric field domain formation in magnetic multiple QWs was theoretically investigated in Ref. 21.…”

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Resonant tunneling magnetoresistance in coupled quantum wells

Ertler

Fabian

2006

Applied Physics Letters

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A three barrier resonant tunneling structure in which the two quantum wells are formed by a magnetic semiconductor is theoretically investigated. Self-consistent numerical simulations of the structure predict giant magnetocurrent in the resonant bias regime as well as significant current spin polarization for a considerable range of applied biases. The requirements for large magnetocurrent are spin resolved resonance levels as well as asymmetry ͑spatial or magnetic͒ of the coupled quantum wells. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2402878͔Semiconductor spintronics offers additional functionalities to the existing electronics technology by combining charge and spin properties of the current carriers. 1 Spin dependent resonant tunneling in double barrier heterostructures has been investigated both experimentally and theoretically with a magnetic quantum well ͑QW͒ made of semimetallic ErAs ͑Refs. 2 and 3͒ or dilute magnetic semiconductors ͑DMSs͒ such as GaMnAs ͑Refs. 4-9͒ or ZnMnSe ͑Refs. 10 and 11͒. Such diodes have been used as spin filters or spin detectors and effective injection of spin-polarized electrons into semiconductors has been demonstrated by employing interband tunneling devices based on GaMnSb. 12,13 A theoretical investigation of resonant tunneling through a nonmagnetic double barrier structure, e.g., AlAs/ GaAs/ AlAs, sandwiched between two bulk ferromagnetic DMSs, e.g., GaMnAs, shows a tremendous enhancement of the tunneling magnetoresistance ͑TMR͒ for low voltages if the thickness of the QW is properly tuned. 14 The effect has been demonstrated to be as high as 10 000% for generic parabolic bands and when including a more realistic kp band structure model still very high TMRs of about 800% have been obtained. 14 Such structures have already been grown and studied experimentally. 4,15,16 Here we propose to use magnetic resonant tunneling diodes ͑RTDs͒ comprising coupled magnetic QWs and three nonmagnetic barriers, as spintronic devices offering large magnetocurrents ͑MCs͒. Corresponding nonmagnetic three barrier structures have been experimentally studied, [17][18][19][20] while electric field domain formation in magnetic multiple QWs was theoretically investigated in Ref. 21. The magnetic three barrier structure allows to establish parallel ͑P͒ and antiparallel ͑AP͒ magnetization configurations and to observe MC. The QWs are assumed to be made of ferromagnetic semiconductors. 5,22 We consider here generic parabolic n-type ferromagnetic QWs, though one expects to observe similar effects in coupled p-type ferromagnetic QWs. Several suitable n-type ferromagnetic semiconductors have been reported: 1 HgCr 2 Se 4 , 23 CdCr 2 Se 4 , 24 CdMnGeP 2 , 25 or most promising ZnO and GaMnN; 22,27 the latter two are believed to exhibit room temperature ͑RT͒ ferromagnetism. To be specific we perform our numerical simulations for GaMnNbased structures.However, it is still controversial if the reported RT ferromagnetism in transition metal doped GaN and ZnO is due to non-resolved precipitates or n...

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Shot-noise characteristics of triple-barrier resonant-tunneling diodes

Cited by 14 publications

References 14 publications

Enhanced Shot Noise in Tunneling through a Stack of Coupled Quantum Dots

Enhanced Shot Noise in Tunneling through a Stack of Coupled Quantum Dots

Electronic Conductivity in Open Cylindrical Two-Barrier Symmetric Resonance Tunnel Structure

Resonant tunneling magnetoresistance in coupled quantum wells

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