Shortest wavelength semiconductor laser diode

Akasaki, Isamu; Sota, Shigetoshi; Sakai, Hiromitsu; Tanaka, Toŝhiyuki; Koike, Masayoshi; Amano, Hiroshi

doi:10.1049/el:19960743

Cited by 457 publications

(126 citation statements)

References 6 publications

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“…Due to the similar ratio c/a of the lattice constants in GaN and InN we attribute the field entirely due to the piezoelectric component, . In wurtzite the piezoelectric polarization along the zaxis is given by P z = e 31 ( ε xx + ε yy ) + e 33 ε zz , (8) where e 31 and e 33 are components of the piezoelectric tensor. Assuming a constant dielectric coefficient ε r =10.4 at the value of GaN and ε xx = ε yy =-ε zz c 33 /c 13 we experimentally find e 33 −3.34 e 31 = 0.3 C/m 2 .…”

Section: Piezoelectric Constantsmentioning

confidence: 99%

“…Significant progress in the hetero-epitaxy of group-III nitrides [1] using low temperature deposited buffer layers [2] [3] [4], multiple buffer layer techniques [5] and lateral epitaxial overgrowth [6] have led to record breaking devices such as light emitting diodes and laser diodes [7] [8] in the UV, blue and green region as well as high frequency [9] and high power [10] switching devices. As a function of composition the alloys of GaN and InN should cover the entire spectral region from the very near UV to the red while AlGaN covers a wide range in the near UV.…”

Section: Introductionmentioning

confidence: 99%

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On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect

Wetzel

Nitta

Takeuchi

et al. 1998

MRS Internet j. nitride semicond. res.

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A study of the optoelectronic properties of strained 40 nm Ga 1-x In x N layers on GaN films is presented. The fact of pseudomorphic strain leads to a new interpretation of the film composition when derived from x-ray scattering. In addition we directly confirm that strain induces huge piezoelectric fields in this uniaxial system by the observation of Franz-Keldysh oscillations in photoreflection. As a function of composition (0 < x < 0.2) and strain we derive the electronic band gap energy and the piezoelectric field strength. We interpret both in terms of effective bowing parameters and piezoelectric coefficients, respectively. From a spatially resolved micro photoluminescence at room temperature we find no evidence for spatial band gap or composition variations of more than 60 meV over the length scale from 1 to 50 µ m (x=0.187) in our material. At the same time, an observed discrepancy between photoluminescence peak energy and photoreflection band gap energy increases with x to some 160 meV. We attribute this redshift to photon assisted tunneling in the huge piezoelectric fields (Franz-Keldysh effect).

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Section: Piezoelectric Constantsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect

Wetzel

Nitta

Takeuchi

et al. 1998

MRS Internet j. nitride semicond. res.

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“…The rapid development of device quality GaN, InGaN and AlGaN over the past five years has lead to the commercialization of blue and green light emitting diodes, along with demonstrations of violet laser diodes and a variety of electronic devices [1] [2] [3] [4] [5] [6] [7] [8] [9] [10]. In addition, a number of photodetectors based on photoconductive and junction devices have also recently been reported [11] [12] [13].…”

Section: Introductionmentioning

confidence: 99%

Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes

Brown

Matthews

et al. 1999

MRS Internet j. nitride semicond. res.

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A visible-blind UV camera based on a 32 x 32 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully demonstrated. Each of the 1024 photodiodes in the array consists of a base n-type layer of AlGaN (~20%) onto which an undoped GaN layer followed by a p-type GaN layer is deposited by metallorganic vapor phase epitaxy. Double-side polished sapphire wafers are used as transparent substrates. Standard photolithographic, etching, and metallization procedures were employed to obtain fully-processed devices. The photodiode array was hybridized to a silicon readout integrated circuit using In bump bonds. Output from the UV camera was recorded at room temperature at a frame rate of 30 Hz. This new type of visible-blind digital camera is sensitive to radiation from 320 nm to 365 nm in the UV spectral region.

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“…An especially intense effort has been directed towards the studies of Ga-rich alloys, which are used as the active layer in blue and green light emitting diodes and lasers [1][2][3][4].…”

mentioning

confidence: 99%

Small band gap bowing in In1−xGaxN alloys

Walukiewicz

et al. 2002

Applied Physics Letters

604

325

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High-quality wurtzite-structured In-rich In1−xGaxN films (0⩽x⩽0.5) have been grown on sapphire substrates by molecular beam epitaxy. Their optical properties were characterized by optical absorption and photoluminescence spectroscopy. The investigation reveals that the narrow fundamental band gap for InN is near 0.8 eV and that the band gap increases with increasing Ga content. Combined with previously reported results on the Ga-rich side, the band gap versus composition plot for In1−xGaxN alloys is well fit with a bowing parameter of ∼1.4 eV. The direct band gap of the In1−xGaxN system covers a very broad spectral region ranging from near-infrared to near-ultraviolet.

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Shortest wavelength semiconductor laser diode

Cited by 457 publications

References 6 publications

On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect

On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect

Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes

Small band gap bowing in In1−xGaxN alloys

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