Short‐wave infrared photodetector with high responsivity and signal‐to‐noise ratio

Abstract

Shortwave infrared photodetectors with a p-charge layer and double barrier structure are designed and fabricated by molecular beam epitaxy. The current intensity is lowered by three orders of magnitude compared with the detector without the p-charge layer. The tested responsivity of the detector is 485 A/W at 0.31 V, when the power of the incident light is 10 nW. By adding the p-charge layer, the signal-to-noise ratio of the detector is promoted by 30 times, which reaches 1712 at 0.3 V, when the power of the incident light is 1 nW.