Short-Wave Infrared HgCdTe Avalanche Photodiodes

Rothman, J.; Mollard, L.; Bosson, Sylvie; Vojetta, Gautier; Foubert, Kevin; Gatti, S.; Bonnouvrier, Gwladys; Salveti, F.; Kerlain, A.; Pacaud, O.

doi:10.1007/s11664-012-1970-4

Cited by 58 publications

(22 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Using a more precise electrical model for the APD diode [5] we also performed circuit simulations that confirm the previous analysis. Coupling an APD with a direct injection pixel gives injection gain above 99% even at low current (10 -18 A) and low gain.…”

Section: B Direct Injectionsupporting

confidence: 72%

ROIC development at CEA for SWIR detectors: pixel circuit architecture and trade-offs

Guellec

Boulade²,

Cervera

et al. 2017

International Conference on Space Optics — ICSO 2014

View full text Add to dashboard Cite

I. INTRODUCTIONInfrared detection is widely used in astrophysics and plays a key role in several space missions aiming for example at scanning the sky to discover new objects (coolest stars, dust-obscured galaxies, exo-planets …) or studying the evolution of the universe, where light is redshifted in the infrared range. In many cases the space telescope involves an HgCdTe infrared detector operating at low frame rate over long integration time. Due to the very low input signal, dark current and readout noise are essential figures that must be minimized to get the best detector sensitivity. This kind of application also requires very large focal plane array (FPA) often relying on a butting arrangement of large detectors [1]. The trend is to increase the single detector format from 1Kx1K to 2Kx2K and 4Kx4K. For very large formats, material quality and detector process may affect the production yield and the global infrared FPA cost. As a result the detector format could result from a trade-off taking into account producibility.In the first part, we review three common pixel circuits and discuss their characteristics with respect to these application needs. In the second part we describe a ROIC based on SFD pixel that we have developed at CEA-LETI. Then we provide in the third part test results and electrical performances of the ROIC.

show abstract

Section: B Direct Injectionsupporting

confidence: 72%

ROIC development at CEA for SWIR detectors: pixel circuit architecture and trade-offs

Guellec

Boulade²,

Cervera

et al. 2017

International Conference on Space Optics — ICSO 2014

View full text Add to dashboard Cite

show abstract

“…Bandwidth is calculated from the relation, BW = 2.2/2πτ response . Rothman 59,62 , et al of the same group have observed the gain of 600 with excess noise factor (F) =1.2 in short wave e-APD (λ c = 2.9 µm, x cd = 0.4) at 80 K operating temperature. They have measured gain of 200 with F < 1.3 and dark current = 6.2 µA/cm 2 with λ c = < 2.8 µm at 300 K operating temperature.…”

Section: Development Of Hgcdte Based Apd Device Technologymentioning

confidence: 99%

“…based MWIR e-APD Vacancy doped p-type Hg 1-x Cd x Te epilayer grown on (111)B CdZnTe substrate with composition x = 0.30, carrier Gain ~ 5000 at -12 V; F: 1-1.5; first measurement of impulse response time; BW = 600 MHz; GBW=2.1THz at gain of 2800; Sofradir/ CEA-LETI [59][60]62 λ c = 2 µm to 2.9 µm (SWIR) 16 cm -3 . The devices are exposed to the 300 K background during the dark current and the dark plus photocurrent versus voltage were measurement at 80 K. Figure 5 shows the dark current and dark plus photo current as a function of reverse bias.…”

Section: Fabrication and Characteristics Of Hgcdtementioning

confidence: 99%

“…HgCdTe APD is an attractive choice for many IR applications such as LIDAR/ LADAR, defence, night vision, optical communications & atmospheric studies [9][10][11][45][46] . HgCdTe based SWIR APDs can be used as sensor in the LADAR system or 3-D imaging applications 40,[47][48][49][50][51][52][53][54][55][56][57][58][59][60] . CEA-LETI has been involved in the development of HgCdTe based e-APD focal plane array for Passive (thermal imaging) and active (2D/3D flash LADAR imaging) imaging since last a few years.…”

Section: Applicationsmentioning

confidence: 99%

See 1 more Smart Citation

Infrared Avalanche Photodiode Detectors

Singh

Pal

2017

Def. Sc. Jl.

View full text Add to dashboard Cite

This study presents on the design, fabrication and characteristics of HgCdTe mid-wave infrared avalanche photodiode (MWIR APD). The gain of 800 at -8 V bias is measured in n + -ν-p + detector array with pitch size of 30 μm. The gain independent bandwidth of 6 MHz is achieved in the fabricated device. This paper also covers the status of HgCdTe and III-V material based IR-APD technology. These APDs having high internal gain and bandwidth are suitable for the detection of attenuated optical signals such as in the battle field conditions/long range imaging in defence and space applications. It provides a combined solution for both detection and amplification if the detector receives a very weak optical signal. HgCdTe based APDs provide high avalanche gain with low excess noise, high quantum efficiency, low dark current and fast response time.

show abstract

“…The short wave infrared (SWIR) around 3 µm is a good compromise between the gain that can be obtain for a given APD bias and the background and dark current. The CEA LETI HgCdTe APD technology, and a fine analysis of the gain curve characteristic are presented in [1] and won't be detailed here. The response time of the APD is also a key factor for a high frame rate FPA.…”

Section: Introductionmentioning

confidence: 99%