Short-range order and atomic clusters in liquid Cu–Sn alloys

Grüner, S.; Kaban, I.; Kleinhempel, Ronny; Hoyer, W.; Jóvári, P.; Delaplané, R. G.

doi:10.1016/j.jnoncrysol.2005.08.037

Cited by 37 publications

(16 citation statements)

References 14 publications

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“…Similar conclusions have been drawn from measurements of thermophysical properties as the dynamic viscosity [1,2], the electrical resistivity [14] and diffusion coefficients [15] as well as from investigations of the short-range order in liquid state [16][17][18] for a number of alloy systems, e.g. Cu-Sn, Ag-Sn, or Cu-Ge.…”

Section: Discussionsupporting

confidence: 74%

The dynamic viscosity of liquid Cu–Si alloys

Grüner

Hoyer

2008

Journal of Alloys and Compounds

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Section: Discussionsupporting

confidence: 74%

The dynamic viscosity of liquid Cu–Si alloys

Grüner

Hoyer

2008

Journal of Alloys and Compounds

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“…It has been demonstrated that the structure of molten alloys near to the melting point is strongly inhomogeneous in composition. Clustering and medium-range order of the concentration fluctuations occur [15][16][17]. Such phenomena could explain the inhomogeneous distribution of the current density in the melts.…”

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confidence: 90%

Purification of liquid indium by electric current-induced impurity migration in a static transverse magnetic field

et al. 2009

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We have developed an original method for indium purification. Our approach is based on the directional transfer of impurities by applying crossed electric and magnetic fields to the melting volume. The method reduced the concentration of nickel and tin by a factor of 10 while copper was reduced by a factor of 3. A simple hydrodynamic mass transport model describing the process was also derived. Ó 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.Keywords: Impurity migration; Indium; Inductively coupled plasma-optical emission spectroscopy (ICP-OES); Purification Since the late 1980s the demand for, and the price of, indium has increased due to the constant growth of its market [1,2]. High-purity indium is mainly used in the making of indium tin oxide (ITO) thin films for liquid crystal displays (about 65% of the total industrial consumption) and for the production of semiconductor compounds. The required level of the purity here is more than 99.9999 wt.% (6 N quality), i.e. the total concentration of the impurities should be less than 1 part per million (ppm). 6 N indium is produced by a fine purification of primary 4 N metal using different physical and physical-chemical methods (for a review, see Refs. [2,3] and references cited therein) but only physical methods can guarantee minimum contamination by any foreign chemicals or purification plant materials. Traditional crystallization methods such as zone melting and Czochralski crystal growth [4] are also used to achieve a high purification. However, these crystallization methods cannot remove from the solid phase impurities with a unit segregation coefficient, whereas most elements in the concentration range of 10 À5 % to 10 À6 % and lower possess such a segregation.In the present paper, we propose an original approach for a fine purification of indium and other low-melting-point metals. Our method is based on the directional transfer of impurities by applying crossed electric and magnetic fields [5,6]. We report the construction of our experimental set-up and present the results of the trace element analysis with inductively coupled plasma-optical emission spectroscopy (ICP-OES).The schematic configuration of our experimental setup is shown in Figure 1. Liquid indium is moved by the magnetohydrodynamic pump MHDP placed in the pumping zone Z1 via 1.5 mm diameter pipes toward the purification zone Z2, where it passes through the crossed magnetic and electric fields. The static magnetic fields with induction B of 0.6 and 0.5 T in zones Z1 and Z2, respectively, are produced by a set of samarium-cobalt block magnets [7]. The electric currents are provided by 30 A DC power supplies U1, U2 assembled in our laboratory. The electrical connectors k1, k2 equipped with 1.8 mm diameter pure tungsten rods are used to supply power to the liquid metal. All the reservoirs, pipes, pumps and connectors are made of pure Teflon Ò to avoid contamination of the liquid metal. The length of the circuit is 1.5 m, while the length of the purification zone alone i...

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“…The influence of dopants on the structure of liquid eutectic alloys has not been studied yet [9]. The Cu 0.70 -Si 0.30 eutectic alloy has been chosen for our X-ray diffraction studies due to the significant difference in the structure of its components.…”

Section: Introductionmentioning

confidence: 99%