Short-Pulse Operation of a High-Power-Density Proton-Implanted Vertical-Cavity Surface-Emitting Laser Array

Abstract

We report on a GaAs-based high-power-density vertical-cavity surface-emitting laser diode (VCSEL) array with ion-implanted isolated current apertures. A peak output power of 40.6 W has been achieved from the VCSEL array with seven emitters under 100-ns-pulse operation. This is the first demonstration of a ten-watt-class output power for a VCSEL array with ion-implanted isolated current aperture configuration. The corresponding power-density is estimated to be 73.8 kW/cm 2 , which is three times greater than the record power-density of the short-pulseoperated oxide-confined VCSEL. #

Proton-implantation technique for high-power laser light

“…We achieved a peak output power of 40.6W at the pulsed current of 50A. 5 This is the first demonstration of 10W-class output power from a proton-implanted VCSEL. The previously reported maximum power density of oxide-confined VCSELs was 24.6kW/cm 2 with a pulse width of 60ns and a repetition frequency of 100Hz.…”

Development of a high-power vertical-cavity surface-emitting laser array with ion-implanted current apertures

“…Moreover, we have developed a VCSEL-array hexagonally-arranged with seven emitters of the VCSEL. A peak output power of over 40 W under 100-ns-pulse operation has been achieved from the VCSELarray 16 . This is the first demonstration of ten watt-class output power for ion-implanted VCSELs.…”

High-peak-power vertical-cavity surface-emitting laser quasi-array realized using optimized large-aperture single emitters

“…[1][2][3][4] Recently, high-power VCSELs under pulsed operation have attracted much attention owing to their potential applications such as laser fuzing, medical treatment, car-sensing, and laser ranging. [5][6][7][8][9][10] High-power VCSELs show excellent yield and reliability under short-pulse operation, benefiting from the suppressed self-heating effect within the active region and the absence of COD. Thus, the maximum output powers of 92 W 6) from a single emitter and 123 W 7) from a 16-arrayed emitter have been achieved under short-pulse operation.…”

“…Moreover, a high-power-density proton-implanted VCSEL array consisting of seven arrayed emitters with a 40 W peak power was reported. 8,9) Owing to the uniform current distribution at a small current aperture, a VCSEL array can achieve a higher external efficiency, 11) which is the main reason for its higher output power than large-aperture single emitters. However, because of the electrically parallel relationship between all of the element devices, the operating current of a VCSEL array must be very high to achieve a high output power.…”

“…Moreover, the maximum power of 62 W is achieved, which was higher than the record power of protonimplanted single emitters and arrays. 8) As the VCSEL array shows disadvantages such as high operation current, and electrical and thermal crosstalk, a VCSEL quasi-array consisting of four single emitters is developed in this communication. The large-aperture single emitter with a 300-µm-diameter oxide aperture and a 240µm-diameter p-contact was adopted as the basic building block owing to its good performance.…”