Short-circuit behavior of the three-level advanced-active-neutral-point-clamped converter

Hammes, David; Fuhrmann, Jan; Gierschner, Sidney; Beuermann, Max; Eckel, Hans-Günter

doi:10.23919/epe17ecceeurope.2017.8099180

Cited by 6 publications

(2 citation statements)

References 12 publications

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“…In the literature, several model-based methods have been proposed for fault diagnosis in power electronics. The majority of them focus on the actuation part of the GSC, such as open-circuit faults [12], [13], [14] and short-circuit faults on the insulated-gate bipolar transistors (IGBTs) [15], [16]. So far, only few works consider a model-based approach for current sensors fault with emphasis on the ac side of GSC [17], [18], [19].…”

Section: Introductionmentioning

confidence: 99%

Model-Based Fault Diagnosis Scheme for Current and Voltage Sensors in Grid Side Converters

Mehmood

Papadopoulos

Hadjidemetriou

et al. 2023

IEEE Trans. Power Electron.

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Section: Introductionmentioning

confidence: 99%

Model-Based Fault Diagnosis Scheme for Current and Voltage Sensors in Grid Side Converters

Mehmood

Papadopoulos

Hadjidemetriou

et al. 2023

IEEE Trans. Power Electron.

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“…In [19], the SC events valid for three-level (3-L) neutral point clamped (NPC) converter are investigated. In [20][21][22], all possible SSC failures of active neutral point clamped (ANPC) converter are listed. However, most papers just refer to the type of SC current loops.…”

Section: Introductionmentioning

confidence: 99%

Voltage division investigation of series short‐circuit fault on SiC MOSFETs and Si IGBTs

Zhang

Wang

Zhang

et al. 2022

IET Power Electronics

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In power electronic systems, when a power device turns on by mistake, there would be at least two devices in the short-circuit (SC) current loop, forming series short-circuit (SSC) fault. In this paper, the dynamic characteristics of SiC MOSFETs, Si IGBTs in SSC are investigated based on the half-bridge circuit. The effect laws of load current and junction temperature to voltage division in SSC are discussed. Taking a three-level (3-L) active neutral point clamped (ANPC) topology based on hybrid utilization of Si IGBT and SiC MOSFET as the research object, the SSC performance is investigated. The theoretical and experimental results show that, in the process of SSC, the voltage division features of SiC MOSFETs and Si IGBTs are different and highly sensitive to circuit parameters. When both SiC MOSFET and Si IGBT are in the SC current loop, the device with a lower saturation current level limits the short circuit current and bears most of the dc-bus voltage. Moreover, in the Si/SiC hybrid 3-L ANPC topology, if the saturation current of selected SiC MOSFETs is higher than that of Si IGBTs, the SC withstanding level of SiC MOSFETs could be improved, thereby reducing the SC protection circuit requirements.

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Back-to-back configuration of multilevel converters providing redundant operation mode

Gierschner

Hammes

Hein

et al. 2017

2017 IEEE 12th International Conference on Power Electronics and Drive Systems (PEDS)

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Short-circuit behavior of the three-level advanced-active-neutral-point-clamped converter

Cited by 6 publications

References 12 publications

Model-Based Fault Diagnosis Scheme for Current and Voltage Sensors in Grid Side Converters

Model-Based Fault Diagnosis Scheme for Current and Voltage Sensors in Grid Side Converters

Voltage division investigation of series short‐circuit fault on SiC MOSFETs and Si IGBTs

Back-to-back configuration of multilevel converters providing redundant operation mode

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