Short Channel Effect of Solution-Processed ZnO Thin Film Transistors: Optimization for Photolithographic Process

Jeong, Youn-Joong; Lee, Hyun Uk; Pearson, Christopher; Petty, Michael C.

doi:10.1166/nnl.2018.2717

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2024

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“…The zinc oxide solution was prepared using a previously reported method [ 23 , 24 , 25 , 26 , 27 , 28 ]. Briefly, zinc hydroxide was synthesized from zinc nitrate, Zn(NO 3 ) 2 (Duksan, Ansan-si, Republic of Korea, 95%, used without further purification).…”

Section: Methodsmentioning

confidence: 99%

Effects of Hydrogen Plasma Treatment on the Electrical Behavior of Solution-Processed ZnO Thin Films

Park,

Lee,

Pearson

et al. 2024

Materials

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In this study, the effect of atmospheric hydrogen plasma treatment on the in-plane conductivity of solution-processed zinc oxide (ZnO) in various environments is reported. The hydrogen-plasma-treated and untreated ZnO films exhibited ohmic behavior with room-temperature in-plane conductivity in a vacuum. When the untreated ZnO film was exposed to a dry oxygen environment, the conductivity rapidly decreased, and an oscillating current was observed. In certain cases, the thin film reversibly ‘switched’ between the high- and low-conductivity states. In contrast, the conductivity of the hydrogen-plasma-treated ZnO film remained nearly constant under different ambient conditions. We infer that hydrogen acts as a shallow donor, increasing the carrier concentration and generating oxygen vacancies by eliminating the surface contamination layer. Hence, atmospheric hydrogen plasma treatment could play a crucial role in stabilizing the conductivity of ZnO films.

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