2018
DOI: 10.1016/j.actamat.2018.07.047
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Shock-induced amorphization in silicon carbide

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Cited by 83 publications
(35 citation statements)
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“…In our case, the amorphous shear band is the primary driver of plasticity and it is approximately 2 nm thick (without noticeable dependence of the thickness on the grain size). Amorphous shear bands similar to ours have been previously observed in shock-loaded covalent ceramics (i.e., B 4 C and SiC) 35,36 . However, they were initiated either along certain crystallographic planes (B 4 C) or by planar faults (SiC) and, without exception, they provided the dominant mode of brittle fracture 3739 .…”
Section: Resultssupporting
confidence: 88%
“…In our case, the amorphous shear band is the primary driver of plasticity and it is approximately 2 nm thick (without noticeable dependence of the thickness on the grain size). Amorphous shear bands similar to ours have been previously observed in shock-loaded covalent ceramics (i.e., B 4 C and SiC) 35,36 . However, they were initiated either along certain crystallographic planes (B 4 C) or by planar faults (SiC) and, without exception, they provided the dominant mode of brittle fracture 3739 .…”
Section: Resultssupporting
confidence: 88%
“…For different materials (e.g., organic α-HMX crystal, Si, SiC, and SmCo 5 ) plastic deformation in shock or dynamic loading occurs by generation and motion of dislocations or twin boundaries up to some pressure or strain rate and via formation of amorphous shear nanobands at higher pressure or strain rate [145,180,318,[469][470][471][472]. This amorphization may occur via VM, like pressure-induced amorphization in [249].…”
Section: Virtual Melting As a New Mechanism Of Plastic Deformation And Stress Relaxation Under High Strain Rate Loadingmentioning
confidence: 99%
“…8 Certain SiC defects have sharp optical and spin transitions, 15 and therefore defect engineering is applied to explore and fabricate high performance SiC devices. [15][16][17] Amorphization of SiC takes place under laser shock, 18 electron beam irradiation 19 and deformation. 4,9 Stacking faults serve as a precursor of amorphization.…”
mentioning
confidence: 99%