Shift and deformation of the hysteresis curve of ferroelectrics by defects: An electrostatic model

Robels, U.; Calderwood, J.H.; Arlt, G.

doi:10.1063/1.359511

Cited by 104 publications

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“…[1][2][3][4] Other explanations included domain pinning, 5,6 rectifying effects formed at the ferroelectric-electrode interface [7][8][9] and the effect of passive layers. [10][11][12] It seems that the definitive mechanism is still not fully understood and the voltage shift may arise from multiple sources. Theoretical models to gain deeper insight using different approaches have been proposed.…”

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confidence: 99%

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A possible mechanism of anomalous shift and asymmetric hysteresis behavior of ferroelectric thin films

Wong

Shin

2005

Appl. Phys. Lett.

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We studied theoretically the hysteresis behavior of ferroelectric thin films. The anomalous ferroelectric response is discussed by use of a bilayer model. Electrical conductivities of the films have been taken into account. To model the effects of the inhomogeneity of polarization and permittivity across the interface, the film is assumed to possess a secondary dielectric/ferroelectric phase ͑a dead or passive layer͒ with asymmetric conductivity. This configuration is found to produce large shifting ͑along the field axis͒ and deformation of the measured hysteresis loop. This is a manifestation of the asymmetric conductivity of the material. Theoretical calculation based on this model shows that the observed phenomena of shifted and skewed hysteresis loop in ferroelectric thin films can be explained in this way. © 2005 American Institute of Physics. ͓DOI: 10.1063/1.1853520͔The hysteresis behaviors of ferroelectric thin films have attracted great research interest for many years. Their bistable polarization as well as small size are promising characters for developing compact nonvolatile memories. Research studies of the anomalous effects and degradation mechanisms in the hysteresis behavior of ferroelectric thin films are essential for device applications. A most notable phenomenon is the large voltage offset along the horizontal ͑electric field͒ axis found in the hysteresis loop measurements. [1][2][3][4][5][6][7][8][9][10][11] The result is a deformed hysteresis loop with asymmetric switching. 6 Many researchers attributed the shift effect to the internal field caused by trapped charge carriers. [1][2][3][4] Other explanations included domain pinning, 5,6 rectifying effects formed at the ferroelectric-electrode interface 7-9 and the effect of passive layers. [10][11][12] It seems that the definitive mechanism is still not fully understood and the voltage shift may arise from multiple sources. Theoretical models to gain deeper insight using different approaches have been proposed. [11][12][13][14][15] In the absence of a unifying theory to account for all possible origins, we believe that the current theoretical understanding of the shift phenomenon can benefit from further input in terms of ideas and models. This work attempts to model this offset phenomenon by introducing a passive dielectric/ferroelectric layer at the filmelectrode interface. In the framework of the LandauGinzburg theory, the variation of polarization, which is usually more pronounced in thinner films, is modeled by a gradient term and extrapolation lengths in the free energy expression. This approach is suggested to be effectively the same as the existence of a passive layer ͑or dead layer͒. 16 It has been demonstrated that polarization gradient across a ferroelectric film can lead to asymmetric conduction. 17 The spatially varied polarization near the thin film surfaces is then thought to possess asymmetric electrical conductivity, while asymmetric conductivity may not emerge from the "normal" region of the film since the polarization shoul...

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confidence: 99%

“…A most notable phenomenon is the large voltage offset along the horizontal ͑electric field͒ axis found in the hysteresis loop measurements. [1][2][3][4][5][6][7][8][9][10][11] The result is a deformed hysteresis loop with asymmetric switching. 6 Many researchers attributed the shift effect to the internal field caused by trapped charge carriers.…”

mentioning

confidence: 99%

A possible mechanism of anomalous shift and asymmetric hysteresis behavior of ferroelectric thin films

Wong

Shin

2005

Appl. Phys. Lett.

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“…[1][2][3][4] Other explanations included domain pinning, 5,6 rectifying effects formed at the ferroelectric-electrode interface, [7][8][9] and the effect of passive layers. [10][11][12] It seems that there is no general agreement on a definitive mechanism and that the voltage shift may possibly arise from multiple sources. In addition, many previously suggested mechanisms have not been fully examined by accurate physical models or simulations.…”

Section: Introductionmentioning

confidence: 99%

“…One of the most notable phenomenon is the large voltage offset along the horizontal (electric-field) axis found in the hysteresis loop measurements. [1][2][3][4][5][6][7][8][9][10][11] The result is a deformed hysteresis loop with asymmetric switching. 6 Many researchers attributed the shift effect to the internal field caused by trapped charge carriers.…”

Section: Introductionmentioning

confidence: 99%

Modeling of anomalous shift and asymmetric hysteresis behavior of ferroelectric thin films

Wong

Shin

2004

Journal of Applied Physics

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Surface acoustic wave micromotor with arbitrary axis rotational capability Appl. Phys. Lett. 99, 214101 (2011) Dielectric model of point charge defects in insulating paraelectric perovskites J. Appl. Phys. 110, 094110 (2011) A correlated electron diffraction, in situ neutron diffraction and dielectric properties investigation of poled (1-x)Bi0.5Na0.5TiO3-xBaTiO3 ceramics J. Appl. Phys. 110, 084114 (2011) Domain size engineering in tetragonal Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals J. Appl. Phys. 110, 084110 (2011) Influence of the critical point on the electrocaloric response of relaxor ferroelectrics J. Appl. Phys. 110, 064118 (2011) Additional information on J. Appl. Phys. An analytical bilayer model has been developed to consider the effect of the existence of a dead layer (e.g., due to polarization degradation) at the film-electrode interface in an otherwise homogeneous ferroelectric thin film. By introducing asymmetric conductivity in the dead layer, the anomalous horizontal (along the field axis) shift behavior of hysteresis loops in ferroelectric thin films is successfully reproduced. Assuming that the ferroelectric P-E hysteresis loops of the layers are parallelogramlike, explicit expressions are derived for calculating the internal fields in the film, as well as the "apparent" D-E loop as measured from a Sawyer-Tower circuit. The general switching sequence for the ferroelectric phases will be considered. Using the ferroelectric-ferroelectric bilayer model, other anomalous phenomena, including vertical shift and deformed loop shape are also modeled.

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“…Experiments have shown that the coercive field is larger while the remanent polarization is lower in the presence of defects or damage vacancies are present. [22][23][24][25][26][27] On the other hand, due to the interaction between the electrode and the film, interfacial stress is always present at the surface. This stress might be induced by thermal-mismatch or lattice mismatch.…”

Section: ͑10͒mentioning

confidence: 99%

Simulation of thickness effect in thin ferroelectric films using Landau–Khalatnikov theory

2003

Journal of Applied Physics

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The thickness effect in ferroelectric thin films has been theoretically investigated using the LandauKhalatnikov theory. Ferroelectric properties such as the hysteresis loop, and its associated coercive field and the remanent polarization of various film thicknesses have been numerically simulated. In this simulation, the thin film was modeled by the stacking of layers, each of which has unique parameters for the Landau free energy. Due to the interfacial effects near the electrodes, the parameters for the surface layers are different from those for the bulk. The simulated result shows that the coercive field decreases while the remanent polarization increases with thickness. Both of these trends qualitatively agree with experiments.

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Shift and deformation of the hysteresis curve of ferroelectrics by defects: An electrostatic model

Cited by 104 publications

References 10 publications

A possible mechanism of anomalous shift and asymmetric hysteresis behavior of ferroelectric thin films

A possible mechanism of anomalous shift and asymmetric hysteresis behavior of ferroelectric thin films

Modeling of anomalous shift and asymmetric hysteresis behavior of ferroelectric thin films

Simulation of thickness effect in thin ferroelectric films using Landau–Khalatnikov theory

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