Shielding effect of underlayer against secondary electrons generated in substrate in extreme ultraviolet lithography
Takahiro Kozawa
Abstract:The wavelength of a radiation exposure source has been reduced to improve the resolution of lithography in the semiconductor industry. The energy of photons reached the ionizing radiation region when using EUV radiation. Because the energy of EUV photons for lithography is 92.5 eV, the EUV photons can ionize all kinds of atom. In this study, the shielding effect of the underlayer against the secondary electrons generated in the substrates was investigated using the bridging risk as an indicator. Secondary elec… Show more
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