SHG in doped GaSe:In crystals

Feng, Zhi-Shu; Kang, Zhi‐Hui; Wu, Feng-Guang; Gao, Jigang; Jiang, Yun; Zhang, Hongzhi; Andreev, Yu. M.; Ланский, Г. В.; Atuchin, V.V.; Гаврилова, Т. А.

doi:10.1364/oe.16.009978

Cited by 104 publications

(62 citation statements)

References 23 publications

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“…S and Te (anions) and In (cation), generating binary isostructural compounds GaS, GaTe, and InSe, respectively, may form solid solution crystals GaSe 12x S 19,25,26,[67][68][69] , where x is the mixing ratio of the parent binary compounds. The closer the match in the atomic size of the substituting atoms, the larger the mixing ratio of solid solution crystals that may be grown with suitable optical quality, as in the following: GaSe 12x S x with x f 0.44 (11 mass.…”

Section: Specific Features Of the Grown Crystalsmentioning

confidence: 99%

“…In-and Te-doped GaSe Limited incorporation of heavier In-atoms in GaSe leads to an insignificant shift of absorption edges toward the long wave 69 and a small change of the PM conditions. Very small incorporation of heavy Te atoms, with consideration for a wavelength accuracy of 61 nm in common commercial spectrometers, results in a barely resolved shift of absorption edges ( Figure 7) and Raman peaks (Figure 8) toward the long wave.…”

Section: Optical Properties Of Gase Doped With Isovalent Elements Formentioning

confidence: 99%

“…Bearing in mind the low Er solubility 21 , the increase appears to be due largely to the improved optical quality. It was established properly that the maximal transparency window 42,49,55,61,69 and THz range 51 absorption coefficients for all properly doped crystals grown by the modified method, i.e., with a rotating heat field, are 2-3 times lower (f0.03-0.06 cm 21 ) than those for crystals grown by the conventional vertical Bridgman method. These data are confirmed by the increased frequency conversion efficiency.…”

Section: Frequency Conversion: Optimal Dopingmentioning

confidence: 99%

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Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able to generate broadband emission from the near infrared (IR) (0.8 mm) through the mid-and far-IR (terahertz (THz)) ranges and further into the millimeter wave (5.64 mm) range. For the first time, we show that appropriate doping is an efficient method controlling a range of the physical properties of GaSe crystals that are responsible for frequency conversion efficiency and exploitation parameters. After appropriate doping, uniform crystals grown by a modified technology with heat field rotation possess up to 3 times lower absorption coefficient in the main transparency window and THz range. Moreover, doping provides the following benefits: raises by up to 5 times the optical damage threshold; almost eliminates two-photon absorption; allows for dispersion control in the THz range independent of the mid-IR dispersion; and enables crystal processing in arbitrary directions due to the strengthened lattice. Finally, doped GaSe demonstrated better usefulness for processing compared with GaSe grown by the conventional technology and up to 15 times higher frequency conversion efficiency. INTRODUCTIONThe e-polytype of gallium selenide (hereinafter GaSe) has been known since 1934 1 and promises efficient optical frequency conversion and detection over a large range of wavelengths. The performance potential of GaSe, which belongs to the point group symmetry 6m2, can be attributed to its extreme physical properties. GaSe has a broadband transparency window over the range of 0.62-20 mm for non-polarized light continues at wavelengths o50 mm 2,3 . Other attractive physical properties of GaSe are its prodigious birefringence B 5 0.375 at l 5 10.6 mm and 0.79 at terahertz (THz) range 4 , and very high second-order nonlinear susceptibility d 22 5 54 pm V 21 at 10 mm 5 and 24.3 pm/V in the THz band 6 . Among the mid-infrared (IR) anisotropic nonlinear crystals, GaSe has the second highest optical damage threshold 7,8 and thermal conductivity in the plane of the (0001) A GaSe crystal was first used for laser frequency conversion in the mid-IR in 1972 9,10 . In subsequent years, GaSe was widely used for inlab mid-IR applications 5 . Over the past two decades, GaSe has been among the most promising nonlinear optical crystals for efficient generation of ultrabroadband radiation 0.8-5640 mm (with the

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Section: Specific Features Of the Grown Crystalsmentioning

confidence: 99%

Section: Optical Properties Of Gase Doped With Isovalent Elements Formentioning

confidence: 99%

Section: Frequency Conversion: Optimal Dopingmentioning

confidence: 99%

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Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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“…4,5 In short, GaSe (and related doped and un-doped III-VI semiconductors such as GaTe) have emerged as valuable systems in the very active THz research field. [1][2][3]5,6,[8][9][10][11] Work on GaTe and doped GaTe crystals includes the growth and characterization of these systems for broadband tunable THz sources and sensors. 5 Doping with Te, 3,5 S, Cr, 2,6 Ag, 1 and Er 7 was found to strengthen GaSe.…”

Section: Introductionmentioning

confidence: 99%

Magnetic properties of the layered III-VI diluted magnetic semiconductor Ga1−xFexTe

et al. 2016

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Magnetic properties of single crystalline Ga1−xFexTe (x = 0.05) have been measured. GaTe and related layered III-VI semiconductors exhibit a rich collection of important properties for THz generation and detection. The magnetization versus field for an x = 0.05 sample deviates from the linear response seen previously in Ga1−xMnxSe and Ga1−xMnxS and reaches a maximum of 0.68 emu/g at 2 K in 7 T. The magnetization of Ga1−xFexTe saturates rapidly even at room temperature where the magnetization reaches 50% of saturation in a field of only 0.2 T. In 0.1 T at temperatures between 50 and 400 K, the magnetization drops to a roughly constant 0.22 emu/g. In 0 T, the magnetization drops to zero with no hysteresis present. The data is consistent with Van-Vleck paramagnetism combined with a pronounced crystalline anisotropy, which is similar to that observed for Ga1−xFexSe. Neither the broad thermal hysteresis observed from 100-300 K in In1−xMnxSe nor the spin-glass behavior observed around 10.9 K in Ga1−xMnxS are observed in Ga1−xFexTe. Single crystal x-ray diffraction data yield a rhombohedral space group bearing hexagonal axes, namely R3c. The unit cell dimensions were a = 5.01 Å, b = 5.01 Å, and c = 17.02 Å, with α = 90°, β = 90°, and γ = 120° giving a unit cell volume of 369 Å3.

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“…Appropriate doping by various isovalent elements that form isostructural compounds, e.g. sulphur (S), tellurium (Te), indium (In), etc., is an effective way to obtain improvements of GaSe physical properties 7,8 . The optimal Te-doping of 0.38 mass.…”

Section: Introductionmentioning

confidence: 99%

Modification and ab-initio spectroscopic application of modified commerce terahertz spectrometer by using homemade parts

et al. 2015

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Ab-initio study on modification of commerce terahertz spectrometer with time resolution Z-3 (Zomega, USA) by substitution of ZnTe & GaP detectors and LT-GaAs generator for homemade of pure and S-doped GaSe is carried out. It was established that in spite of not optimized parameters pure and doped GaSe:S(0.3 mass%) crystal are comparable, relatively, in generation efficiency and detection sensitivity to commerce units due to lower nonlinear optical loss and much higher damage threshold. The advantages are in force from pump fluences of below 5 mJ/cm 2 for pure GaSe. The closer S-doping to optimal concentration, the lover fluences resulting in the advantages. Pure and S-doped GaSe demonstrate higher reliability and larger dynamic range of operation. Recorded absorption spectra well match known spectra.

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SHG in doped GaSe:In crystals

Cited by 104 publications

References 23 publications

Doped GaSe crystals for laser frequency conversion

Doped GaSe crystals for laser frequency conversion

Magnetic properties of the layered III-VI diluted magnetic semiconductor Ga1−xFexTe

Modification and ab-initio spectroscopic application of modified commerce terahertz spectrometer by using homemade parts

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