Sheet resistance characterization of laser-doped lines on crystalline silicon wafers for photovoltaic applications

Wang, Kee Soon; Tjahjono, Budi; Wong, Johnson; Uddin, Ashraf; Wenham, Stuart

doi:10.1016/j.solmat.2010.12.002

Cited by 15 publications

(16 citation statements)

References 13 publications

(16 reference statements)

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“…13,30 It is also possible to determine R sh of laser-doped lines from modified TLM measurements. 22,23,31 In this case, contacting pads are connected with single or multiple laserdoped lines as shown in Fig. 1.…”

Section: Theory Of Pd Sheet Resistance Measurementsmentioning

confidence: 99%

“…(a) of small size, 22,23 (b) with inhomogeneous depth and resistivity, 3,24,25 (c) with surface roughness, 26 (d) with a non-conductive or conductive coating. 22,23 This work develops guidelines on how to obtain accurate PD measurements on laser-doped areas, which exhibit one or several of the cases (a)-(d).…”

mentioning

confidence: 99%

“…22,23 This work develops guidelines on how to obtain accurate PD measurements on laser-doped areas, which exhibit one or several of the cases (a)-(d). The influence of each case is investigated and analyzed in detail.…”

mentioning

confidence: 99%

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Accurate potential drop sheet resistance measurements of laser-doped areas in semiconductors

Heinrich

Kluska

Binder

et al. 2014

Journal of Applied Physics

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It is investigated how potential drop sheet resistance measurements of areas formed by laser-assisted doping in crystalline Si wafers are affected by typically occurring experimental factors like sample size, inhomogeneities, surface roughness, or coatings. Measurements are obtained with a collinear four point probe setup and a modified transfer length measurement setup to measure sheet resistances of laser-doped lines. Inhomogeneities in doping depth are observed from scanning electron microscope images and electron beam induced current measurements. It is observed that influences from sample size, inhomogeneities, surface roughness, and coatings can be neglected if certain preconditions are met. Guidelines are given on how to obtain accurate potential drop sheet resistance measurements on laser-doped regions

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Section: Theory Of Pd Sheet Resistance Measurementsmentioning

confidence: 99%

mentioning

confidence: 99%

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Accurate potential drop sheet resistance measurements of laser-doped areas in semiconductors

Heinrich

Kluska

Binder

et al. 2014

Journal of Applied Physics

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“…Therefore, alkaline chemical etching is an ineffective approach for texturing mc-Si wafers. [16][17][18][19][20] In addition, several reports have been documented on the dependency of the surface topography to the properties of the irradiating laser and scanning conditions as well as variety in the morphologies that form on the textured area. 13 On the other hand, due to fragility of the Si thin films, mechanical techniques are also incapable for texturing them.…”

Section: Introductionmentioning

confidence: 99%

Morphology based statistical analysis of nanosecond pulsed laser texturing of the multicrystalline silicon

Aghayan

Narayanswamy

2015

Journal of Laser Applications

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In this paper, we investigate the surface morphology of the textured multicrystalline silicon with nanosecond (ns) Nd: YVO 4 laser (wavelength of 1064 nm, repetition rate of 10 KHz, and pulse duration of 14 ns). Various surface topographies have been achieved with different laser as well as irradiation parameters. The textured area average roughness and depth have been statistically analyzed through ANOVA test, which could evaluate the significance and effectiveness of the adopted design of experiment. This research work is based on three control factors: Laser fluence, laser pulse overlap percentage, and number of irradiations. The statistical assessments were conducted based on roughness and depth values measured by optical interferometry. The effect of roughness and depth on solar weighted reflectance (SWR) was analyzed and significant reduction in SWR with increase in R a was observed. In addition, time and energy consumption, which are highly significant in the industrial applications, have been investigated. V C 2015 Laser Institute of America.

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“…4,7 Due to their small scale, characterization of laser-doped micro-scale areas is challenging. 11 Existing methods for measuring the sheet resistance [12][13][14] or the doping concentration 15-17 of laser-doped lines or dots are both time consuming and complex. Previously, an empirical relation was suggested to correlate the sheet resistance of single lines to overlapping lines for laser doping from a liquid thin film with a continuous wave (CW) laser.…”

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confidence: 99%

Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors

Heinrich

Kluska

Hameiri

et al. 2013

Applied Physics Letters

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We present a method that allows the extraction of relevant physical properties such as sheet resistance and dopant profile from arbitrarily shaped laser-doped micro-scale areas formed in semiconductors with a focused pulsed laser beam. The key feature of the method is to use large laser-doped areas with an identical average number of laser pulses per area (laser pulse density) as the arbitrarily shaped areas. The method is verified using sheet resistance measurements on laser-doped silicon samples. Furthermore, the method is extended to doping with continuous-wave lasers by using the average number of passes per area or density of passes

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Sheet resistance characterization of laser-doped lines on crystalline silicon wafers for photovoltaic applications

Cited by 15 publications

References 13 publications

Accurate potential drop sheet resistance measurements of laser-doped areas in semiconductors

Accurate potential drop sheet resistance measurements of laser-doped areas in semiconductors

Morphology based statistical analysis of nanosecond pulsed laser texturing of the multicrystalline silicon

Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors

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