Shedding light on electronically doped perovskites

Stewart, Alexander Wyn; Julien, Arthur; Regaldo, Davide; Schulz, Philip; Soucase, Bernabé Marí; Ceratti, Davide Raffaele; López-Varo, Pilar

doi:10.1016/j.mtchem.2023.101380

Cited by 6 publications

(5 citation statements)

References 74 publications

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“…Whether the interstitial‐induced doping effect is beneficial or detrimental depends strongly on the type and details of any specific device. [ 57 ] For example, doping may be beneficial in light‐emitting diodes. But a device with an Au anode may feature transients to current density or electroluminescence, as well as hysteretic behavior, which may be viewed as a specific instability intrinsic to this type of interface.…”

Section: Resultsmentioning

confidence: 99%

Electrochemical Doping of Halide Perovskites by Noble Metal Interstitial Cations

Kerner

Cohen

et al. 2023

Advanced Materials

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Metal halide perovskites are an attractive class of semiconductors, but it has proven difficult to control their electronic doping by conventional strategies due to screening and compensation by mobile ions or ionic defects. Noble-metal interstitials represent an under-studied class of extrinsic defects that plausibly influence many perovskite-based devices. In this work, doping of metal halide perovskites is studied by electrochemically formed Au + interstitial ions, combining experimental data on devices with a computational analysis of Au + interstitial defects based on density functional theory (DFT). Analysis suggests that Au + cations can be easily formed and migrate through the perovskite bulk via the same sites as iodine interstitials (I i + ). However, whereas I i + compensates n-type doping by electron capture, the noble-metal interstitials act as quasi-stable n-dopants. Experimentally, voltage-dependent, dynamic doping by current density-time (J-t), electrochemical impedance, and photoluminescence measurements are characterized. These results provide deeper insight into the potential beneficial and detrimental impacts of metal electrode reactions on long-term performance of perovskite photovoltaic and light-emitting diodes, as well as offer an alternative doping explanation for the valence switching mechanism of halide-perovskite-based neuromorphic and memristive devices.

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Section: Resultsmentioning

confidence: 99%

Electrochemical Doping of Halide Perovskites by Noble Metal Interstitial Cations

Kerner

Cohen

et al. 2023

Advanced Materials

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“…According to research, increasing the acceptor density can enhance the solar cell's fill factor (FF) and power conversion efficiency (PCE). This is because a greater acceptor density increases the number of holes that can be retrieved from the perovskite layer, leading to a higher current density and greater efficiency [48]. However, there is a limit to the benefits of increasing the acceptor density, as excessively high acceptor densities can result in a decrease in the PCE.…”

Section: Effect Of Cu 2 O Layer Acceptor Density (N Amentioning

confidence: 99%

Enhancing CsSn0.5Ge0.5I3 Perovskite Solar Cell Performance via Cu2O Hole Transport Layer Integration

Rayhan,

Khan,

Islam

2024

International Journal of Photoenergy

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Perovskite solar cells (PSCs) have emerged as a promising alternative to traditional silicon solar cells due to their low cost of fabrication and high power conversion efficiency (PCE). The utilization of lead halide perovskites as absorber layers in perovskite solar cells has been impeded by two major issues: lead poisoning and stability concerns. These hindrances have greatly impeded the industrialization of this cutting-edge technology. In light of the harmful effects of lead in perovskite solar cells, researchers have shifted their attention to exploring lead-free metal halide perovskites. However, the present alternatives to lead-based perovskite exhibit poor performance, thus prompting further inquiry into this matter. The primary objective of this research is to investigate the use of Cu2O as a hole transport layer in combination with lead-free metal halide perovskite (CsSn0.5Ge0.5I3) to achieve superior performance. Through meticulous experimentation, the suggested model has achieved outstanding results by optimizing several key variables. These variables include the thickness of the absorber layer (CsSn0.5Ge0.5I3), defect density, and doping densities, as well as the back contact work function and the operating temperature associated with each layer. The proposed FTO/PC60BM/CsSn0.5Ge0.5I3/Cu2O/Au solar cell structure surpassed prior configurations by comprehensively examining key aspects such as absorber layer thickness and defect density, doping densities, and back contact work. The structure has been also compared with multiple electron transport elements and concluded that the proposed model functions superior due to the use of PC60BM as an electron transport layer and it has an improved electron extraction procedure. Finally, the proposed model has achieved the optimized values as Jsc of 31.56 mA/cm-2, Voc of 1.12 V, FF of 81.47%, and PCE of 27.72%. As a consequence of this research, the investigated structure may be an excellent contender for the eventual creation of lead-free solar power cells made from perovskite.

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“…5,6 It has been suggested that better control of electrical doping can lead to further improvements in perovskite solar cell efficiency. 7,8 Furthermore, most optoelectronic devices require both p-type (holeconducting) and n-type (electron-conducting) material. In nearly all cases this is achieved with impurity doping, which is still an open challenge in the halide perovskites.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Lead halide perovskites have shown impressive performance as light-absorbing materials and are also emerging materials for many optoelectronic applications, including light-emitting diodes , and single-photon emitters. , It has been suggested that better control of electrical doping can lead to further improvements in perovskite solar cell efficiency. , Furthermore, most optoelectronic devices require both p-type (hole-conducting) and n-type (electron-conducting) material. In nearly all cases this is achieved with impurity doping, which is still an open challenge in the halide perovskites …”

Section: Introductionmentioning

confidence: 99%

Trends for Acceptor Dopants in Lead Halide Perovskites

Lyons

Swift

2023

J. Phys. Chem. C

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Lead halide perovskites such as methylammonium lead iodide are attractive solar cell materials, and others such as cesium lead bromide are expected to be high-performing optoelectronic materials with potential applications including lighting, displays, and quantum information. All of these applications will benefit from having fully controlled electrical conductivity, but it has proven difficult to achieve high hole concentrations in these materials via impurity doping. In this work, possible acceptor dopants for the halide perovskites (including Ag, Na, and Cu) are evaluated using first-principles calculations based on a hybrid functional with spin–orbit coupling. We assess which dopants can act as shallow acceptors on the proper substitutional site, whether other configurations of these impurities cause self-compensation, and whether native defects might ultimately compensate p-type doping attempts. Among the dopants considered, sodium is consistently the most promising acceptor for achieving p-type conductivity in halide perovskites.

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Shedding light on electronically doped perovskites

Cited by 6 publications

References 74 publications

Electrochemical Doping of Halide Perovskites by Noble Metal Interstitial Cations

Electrochemical Doping of Halide Perovskites by Noble Metal Interstitial Cations

Enhancing CsSn0.5Ge0.5I3 Perovskite Solar Cell Performance via Cu2O Hole Transport Layer Integration

Trends for Acceptor Dopants in Lead Halide Perovskites

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