Shear Stress Analyses in Chemical Mechanical Planarization Processing with Cu/porous low-k Structure

Kodera, Masahito; Mochizuki, Yoshihiro; Fukuda, Akira; Hiyama, Hirokuni; Tsujimura, Manabu

doi:10.7567/ssdm.2006.g-7-3

Cited by 2 publications

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“…The influence of pore size and shape to Young's modulus and dielectric constant was investigated (8,9) . Shear stress distribution on the surface of the low-k dielectrics during CMP process was studied (10) and it was shown that shear stresses concentrate at the boundary layer between hard mask and low-k dielectrics (11) . However, it has not been clarified the influence of pore arrangement on dielectric properties.…”

Section: Introductionmentioning

confidence: 99%

Extended Theory of U* to Electrostatic Problem and Its Application to Pore Arrangements for Porous Low-k and High-k Dielectric Film

Miyagawa

Omiya

Takahashi

2010

JMMP

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This paper discusses the effects of pore arrangements on the dielectric property of porous low-k and high-k dielectrics. Higher performance large scale integration (LSI) requires lower dielectric constant to decrease line-to-line capacitance. Recently, porous low-k dielectrics are introduced for low-k dielectrics because of its ultra lower dielectric constant. However, their poor mechanical strength causes fractures of porous low-k dielectrics during Chemical Mechanical Polishing (CMP) process. Therefore, it is important to develop porous low-k dielectrics with high mechanical strength and low dielectric constant. On the other hand, porous high-k dielectrics are needed as ferroelectrics. It is also important to understand the dielectric property of porous high-k dielectrics. We studied the dielectric property of porous low-k and high-k dielectrics by finite element method and U* theory. The index U* is used to indicate load paths in a structure. We extended U* theory to the electrostatic field problem and investigated the dielectric property of dielectrics. By using U* in electrostatic field analysis, the dielectric performance of porous low-k and high-k dielectrics becomes more clear.

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Section: Introductionmentioning

confidence: 99%

Extended Theory of U* to Electrostatic Problem and Its Application to Pore Arrangements for Porous Low-k and High-k Dielectric Film

Miyagawa

Omiya

Takahashi

2010

JMMP

View full text Add to dashboard Cite

show abstract

“…The influence of pore size and shape to Young's modulus and dielectric constant was investigated (8,9) . The shear stress distribution on the surface of the low-k dielectrics during CMP process was studied (10) and it was shown that shear stresses concentrate at the boundary layer between hard mask and low-k dielectrics (11) . However, it has not been clarified the pore arrangement which have high mechanical strength and low dielectric constant.…”

Section: Introductionmentioning

confidence: 99%

Material Design for Porous low-k Dielectrics by Genetic Algorithm (GA) and U* Analyses

Miyagawa

Omiya

2010

JMMP

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This paper discusses the optimum pore arrangements on the porous low-k dielectrics through Genetic Algorithm (GA) and U* analyses. Higher performance large scale integration (LSI) requires lower dielectric constant to decrease line-to-line capacitance. Recently, porous low-k dielectrics are introduced for low-k dielectrics because of its ultra lower dielectric constant. However, their poor mechanical strength causes fractures of porous low-k dielectrics during Chemical Mechanical Polishing (CMP) process. Therefore, it is important to develop porous low-k dielectrics that have low dielectric constant and high mechanical strength. To make optimum pore arrangements, GA was introduced and porous structures in the dielectrics were made. Also, the obtained results were evaluated by the index U*. The index U* expresses a degree of load transfer or dielectric force transfer. Through those analyses, the pore arrangements with low dielectric constant and high stiffness were proposed. The obtained results showed that pores were aggregated and arranged obliquely. This is because these structures have an advantage to transfer the load and hinder the dielectric force transfer efficiently.

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Shear Stress Analyses in Chemical Mechanical Planarization Processing with Cu/porous low-k Structure

Cited by 2 publications

References 0 publications

Extended Theory of U<sup>*</sup> to Electrostatic Problem and Its Application to Pore Arrangements for Porous Low-<i>k</i> and High-<i>k</i> Dielectric Film

Extended Theory of U<sup>*</sup> to Electrostatic Problem and Its Application to Pore Arrangements for Porous Low-<i>k</i> and High-<i>k</i> Dielectric Film

Material Design for Porous low-k Dielectrics by Genetic Algorithm (GA) and U* Analyses

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