Sharp metal-insulator transition in Sr(Ti1−xVx)O3−δ thin films on SrTiO3 substrates

Itaka, Kenji; Wakisaka, T.; Mihara, Toshiyuki; Yaginuma, Seiichiro; Matsumoto, Yuji; Koinuma, Hideomi

doi:10.1016/j.tsf.2004.11.230

Cited by 2 publications

(1 citation statement)

References 14 publications

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“…Several studies have measured the critical doping for the MIT to be at different dopings, ranging from between 0.4 [32], 0.6 [34], 0.67 [33] and 0.7 [31]. The critical doping was shown to be restrained between 0.5 and 1 when introducing oxygen vacancies [36].…”

Section: Introductionmentioning

confidence: 99%

Composition-driven Mott transition within SrTi 1−x V x O₃

James,

Aichhorn,

Laverock

2024

Electron. Struct.

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The last few decades has seen the rapid growth of interest in the bulk perovskite-type transition metal oxides SrVO3 and SrTiO3. The electronic configuration of these perovskites differs by one electron associated to the transition metal species which gives rise to the drastically different electronic properties. Therefore, it is natural to look into how the electronic structure transitions between these bulk structures by using doping. Measurements of the substitutional doped SrTi1−xVxO3 shows an metal-insulator transition (MIT) as a function of doping. By using supercell density functional theory with dynamical mean field theory (DFT+DMFT), we show that the MIT is indeed the result of the combination of local electron correlation effects (Mott physics) within the t2g orbitals and the atomic site configuration of the transition metals which may indicate dependence on site disorder. SrTi1−xVxO3 may be an ideal candidate for benchmarking cutting-edge Mott-Anderson models of real systems. We show that applying an effective external perturbation on SrTi1−xVxO3 can switch the system between the insulating and metallic phase, meaning this is a bulk system with the potential use in Mott electronic devices.

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Section: Introductionmentioning

confidence: 99%

Composition-driven Mott transition within SrTi 1−x V x O₃

James,

Aichhorn,

Laverock

2024

Electron. Struct.

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In-situ stoichiometry determination using x-ray fluorescence generated by reflection-high-energy-electron-diffraction

Keenan

Chandril

Myers

et al. 2011

Journal of Applied Physics

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A major challenge in the stoichiometric growth of complex oxide compounds is the control of the relative compositions of the constituent materials. A potential avenue for compositional analysis during growth is the use of x-ray fluorescence generated during reflection high energy electron diffraction measurements. Using this technique, relative compositions of Y and Mn in molecular beam epitaxy grown YMnO3 samples were studied. Comparing the results with Rutherford back scattering spectroscopy suggests that the technique has the potential for real-time analysis of elemental fluxes and stoichiometry control during sample growth.

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Sharp metal-insulator transition in Sr(Ti1−xVx)O3−δ thin films on SrTiO3 substrates

Cited by 2 publications

References 14 publications

Composition-driven Mott transition within SrTi 1−x V x O₃

Composition-driven Mott transition within SrTi 1−x V x O₃

In-situ stoichiometry determination using x-ray fluorescence generated by reflection-high-energy-electron-diffraction

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Sharp metal-insulator transition in Sr(Ti1−xVx)O3−δ thin films on SrTiO3 substrates

Cited by 2 publications

References 14 publications

Composition-driven Mott transition within SrTi 1−x V x O3

Composition-driven Mott transition within SrTi 1−x V x O3

In-situ stoichiometry determination using x-ray fluorescence generated by reflection-high-energy-electron-diffraction

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Composition-driven Mott transition within SrTi 1−x V x O₃

Composition-driven Mott transition within SrTi 1−x V x O₃