Shapes of InAs quantum dots on InGaAs∕InP

Abstract

InAs self-assembled quantum dots were grown on InGaAs lattice-matched on InP by metalorganic chemical vapor deposition. The facet formation on the dot was investigated by atomic force microscopy and transmission electron microscopy. The {136}-faceted InAs dots were elongated along either [13¯0] or [3¯10] to form parallelogram-shaped islands analogous to hut cluster formation in SiGe∕Si quantum dots. Some parallelogram dots also exhibited {110} faceting, presumably on undergoing a shape transition toward dots with facets of higher symmetry.

InAs ∕ InP ( 001 ) quantum dots emitting at 1.55μm grown by low-pressure metalorganic vapor-phase epitaxy

“…1͑a͒. The same type of diamond-shaped QDs have recently been observed by Hwang et al 12 in the case of uncapped QD layers grown on a thin In 0.53 Ga 0.47 As interlayer. The inset of Fig.…”

Microphotoluminescence of exciton and biexciton around 1.5μm from a single InAs∕InP(001) quantum dot

“…1 lower than the density reported in Ref. The same type of geometry, which origin remains unclear, has recently been observed 15 in the case of uncapped InAs/ InP QDs. In our growth conditions, the QD density is mainly driven by the growth rate, and can be precisely controlled between a few 10 8 and a few 10 10 cm −2 by varying the incident TMI flow rate.…”

InAsP/InP(001) quantum dots emitting at 1.55 μm grown by metalorganic vapor phase epitaxy

“…The contrast allows to clearly distinguish the parallelogram-shaped basis of the QDs. The edges of the QDs are parallel to and [3][4][5][6][7][8][9][10] crystallographic directions, as already observed for InAs/InP(001) QDs [4,5]. Some QDs are slightly elongated in one of these two crystallographic directions.…”