Shape memory effect in sputtered Ti–Ni thin films

Arranz, Miguel A.; Riveiro, José Manuel Suárez

doi:10.1016/j.jmmm.2004.11.396

Cited by 8 publications

(6 citation statements)

References 6 publications

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“…8(a)). The observed behavior could be attributed to the following reasons: (a) due to the presence of intrinsic defects [22]; (b) Austenite ↔ R-phase transition that can occur in the amorphous-nanocrystalline alloys [23]. During cooling, self accommodation R-phase transformation commenced at temperature of 300 K and austenite parent phase began to transform to the twinned R-phase with further decrease in temperature.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Grain size effect on structural, electrical and mechanical properties of NiTi thin films deposited by magnetron co-sputtering

Kumar

Singh

Kaur

2009

Surface and Coatings Technology

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Section: Electrical Propertiesmentioning

confidence: 99%

Grain size effect on structural, electrical and mechanical properties of NiTi thin films deposited by magnetron co-sputtering

Kumar

Singh

Kaur

2009

Surface and Coatings Technology

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“…By Matthiessen's rule, we can calculate the total electrical resistance of an alloy as the combination of different resistance values due to electron scattering by phonons . The primary cause of the electron scattering is the presence of lattice imperfections and impurities . Here, it is found that by passing 10‐mA current with increase in temperature from −250 to 50 °C, there is a gradual increase in the voltage consumption for all samples.…”

Section: Resultsmentioning

confidence: 99%

Sputter‐deposited Ni/Ti double‐bilayer thin film and the effect of intermetallics during annealing

Behera

Suman

Aich

et al. 2016

Surface & Interface Analysis

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In the present study, a double bilayer of a Ni/Ti thin film was investigated. A nanoscale NiTi thin film is deposited in a Ni-Ti-Ni-Ti manner to form a double-bilayer structure on a Si(100) substrate. Ni and Ti depositions were carried out by using d.c. and r.f. power, respectively, in a magnetron sputtering chamber. Four types of bilayers are formed by varying the deposition time of each layer (i.e. 15, 20, 25, and 30 min). The as-deposited amorphous thin films were annealed at 300, 400, 500, and 600°C for 1 h to achieve the diffusion in between the layers. Microstructures were analyzed using field-emission scanning electron microscope and high-resolution transmission electron microscope. It was found that, with the increase in annealing temperature from 300 to 600°C, the diffusion at the interface and atomic migration on the surface increase. Cross-sectional micrographs exhibited the interdiffusion between the two-layer constituents, especially at higher temperatures, which resulted in diffusion patches along the interface. Phase analyses, performed by grazing incidence X-ray diffraction, showed the formation of intermetallic compounds with some silicide phases that enhance the mechanical properties. Nanoindentation and atomic force microscopy were carried out to know the mechanical properties and surface profiles of the films. The surface finish is better at higher annealing temperatures. It was found that for annealing temperatures varying from 300 to 600°C, the increase in annealing temperature resulted in a gradual increase in atomic-cluster coarsening with improved adatom mobility.

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“…To obtain in-situ crystalline TiNi thin films, TiNi films were deposited on the Si(100) substrate at high temperatures. In the case of the sputtering method, it is reported that TiNi thin films were crystallized at a substrate temperature of 550°C [25]. The target-substrate distance was fixed at 30 mm to realize both a high deposition rate and low density of droplets on the film surface.…”

Section: Resultsmentioning

confidence: 99%

Composition and crystalline properties of TiNi thin films prepared by pulsed laser deposition under vacuum and in ambient Ar gas

Nam²,

Alghusun

et al. 2012

Nanoscale Res Lett

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TiNi shape memory alloy thin films were deposited using the pulsed laser deposition under vacuum and in an ambient Ar gas. Our main purpose is to investigate the influences of ambient Ar gas on the composition and the crystallization temperature of TiNi thin films. The deposited films were characterized by energy-dispersive X-ray spectrometry, a surface profiler, and X-ray diffraction at room temperature. In the case of TiNi thin films deposited in an ambient Ar gas, the compositions of the films were found to be very close to the composition of target when the substrate was placed at the shock front. The in-situ crystallization temperature (ca. 400°C) of the TiNi film prepared at the shock front in an ambient Ar gas was found to be lowered by ca. 100°C in comparison with that of a TiNi film prepared under vacuum.

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Shape memory effect in sputtered Ti–Ni thin films

Cited by 8 publications

References 6 publications

Grain size effect on structural, electrical and mechanical properties of NiTi thin films deposited by magnetron co-sputtering

Grain size effect on structural, electrical and mechanical properties of NiTi thin films deposited by magnetron co-sputtering

Sputter‐deposited Ni/Ti double‐bilayer thin film and the effect of intermetallics during annealing

Composition and crystalline properties of TiNi thin films prepared by pulsed laser deposition under vacuum and in ambient Ar gas

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