Shape anisotropy induced field-free switching and enhancement of dampinglike field in Pt/Co/PtMn heterostructures with a wedged ultrathin antiferromagnetic PtMn layer

Wu, Birui; Jin, Menghao; Shao, Zongping; Fan, Haodong; Wen, Jinsheng; Li, Hai; Yu, Changqiu; Liu, Bo; Zhou, Tiejun

doi:10.1103/physrevb.108.054417

Cited by 1 publication

(2 citation statements)

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“…An in-plane external magnetic field along the electrical current direction is effective to break such symmetry. Exchange bias is a phenomenon arising from the exchange coupling at the interface between an AFM and FM layer, characterized as a magnetization hysteresis loop shift of the FM layer [71][72][73][74][75][76][77][78]. This phenomenon closely resembles to the effect of introducing an additional magnetic field within the system.…”

Section: All Electrical Sot Control Enabled By Magnetization Engineeringmentioning

confidence: 99%

“…This phenomenon closely resembles to the effect of introducing an additional magnetic field within the system. In this case, an effective magnetic field is generated at the exchange coupled interface, thus all electrical SOT switching of the PMA FM layer can be realized [73][74][75][76][77][78]. Similar to exchange bias in FM/AFM, the pseudo-exchange bias between two FMs is also an effective approach to introduce interface effective magnetic field [79,80].…”

Section: All Electrical Sot Control Enabled By Magnetization Engineeringmentioning

confidence: 99%

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Frontiers in all electrical control of magnetization by spin orbit torque

Hu,

Qiu,

Pan

et al. 2024

J. Phys.: Condens. Matter

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Achieving all electrical control of magnetism without assistance of an external magnetic field has been highly pursued for spintronic applications. In recent years, the manipulation of magnetic states through spin-orbit torque (SOT) has emerged as a promising avenue for realizing energy-efficient spintronic memory and logic devices. Here, we provide a review on the rapidly evolving research frontiers in all electrical control of magnetization by SOT. The first part introduces the SOT mechanisms and SOT devices with different configurations. In the second part, the developments in all electrical SOT control of magnetization enabled by spin current engineering are introduced, which include the approaches of lateral symmetry breaking, crystalline structure engineering of spin source material, antiferromagnetic order and interface-generated spin current. The third part introduces all electrical SOT switching enabled by magnetization engineering of the ferromagnet, such as the interface/interlayer exchange coupling and tuning of anisotropy or magnetization. At last, we provide a summary and future perspectives for all electrical control of magnetization by SOT.

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