Shallow phosphorus diffusion profiles in silicon

Nano-Scale Measurements of Dopants and Electronic Impurities in Individual Silicon Nanowires Using Kelvin Probe Force Microscopy

“…13) is in agreement with P diffusion in bulk silicon and may imply that similar diffusion mechanisms exist in nanowires (Tsai 1969). However more dopant distribution measurements are required in order to obtain the P diffusion mechanism in silicon nanowires.…”

Role of Defects in the Dopant Diffusion in Si

“…The effect of dopant diffusion on the intrinsic point defects has first been recognized for phosphorus. It shows a prominent kink in highconcentration diffusion profiles (Duffy et al, 1968;Tsai, 1969) and was also found to accelerate the diffusion of other dopants separated spatially (Miller, 1960;Yeh, 1962). Similar effects were found for boron, although less pronounced (OrrArienzo et al, 1988).…”

“…Its diffusion behavior was long a matter of dispute. Diffusion profiles after diffusion from the gas phase at high concentrations show prominent kink and tail features (Duffy et al, 1968;Tsai, 1969). In addition, phosphorus was found to accelerate the diffusion of other dopants separated spatially (Miller, 1960;Yeh, 1962), the so-called emitter-push effect in bipolar transistors.…”

Design optimization of piezoresistive cantilevers for force sensing in air and water

“…The diffusion model is based on Ref. 41 and was verified with spreading resistance ͑Solecon Laboratories, Reno, NV͒ for a POCl 3 diffusion process ͓Fig. 9͑a͔͒.…”