Shallow acceptors in Ge/GeSi strained multilayer heterostructures with quantum wells

Гавриленко, В. И.; Erofeeva, I. V.; Korotkov, Andrei; Krasilnik, Z. F.; Кузнецов, О. А.; Moldavskaya, M. D.; Nikonorov, V. V.; Paramonov, L. V.

doi:10.1134/1.567311

Cited by 10 publications

(18 citation statements)

References 9 publications

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“…[6]). The transitions for QW situated acceptors are out of the spectral range accessible to BWT (they have been observed earlier in the photoconductivity measurements with Fourier transform spectrometer [1]). …”

Section: Methodsmentioning

confidence: 92%

“…In contrast to the CR lines, the positions of two other lines, CI 1 and CI 2 , do not extrapolate to the origin of coordinates. Earlier we have observed the CI 2 line in the impurity photoconductivity spectra [1,5] (see open symbols in Fig. 1) and attributed this line either to the photoionization of the A + -center (the A + -center is the QW acceptor ion binding two holes) or to the 1s → 2p + transitions of the barrier situated neutral acceptors (A 0 -centers).…”

Section: Methodsmentioning

confidence: 99%

“…As a result Ge layers are biaxially compressed while GeSi layers are biaxially stretched. The residual shallow acceptor concentration was estimated to be ∼ 10 14 cm −3 [1]. Magnetoabsorption of THz radiation (0.3 to 1.25 THz) generated by backward wave tubes (BWT) has been measured in a swept magnetic field (normal to the plane of the sample) at T = 4.2 K. Free carriers were excited by a modulated (usually 1 kHz meander) bandgap light (λ ∼ 0.9 µm).…”

Section: Methodsmentioning

confidence: 99%

“…The absorption signal is due to free (137) carriers capture by ionized impurities that are always present in a sample because of a partial impurity compensation (cf. [1]). This method allows us to reveal complicated features of confined acceptor spectra not detected by conventional techniques.…”

Section: Introductionmentioning

confidence: 99%

“…Recent interest in the THz range has stimulated investigations of shallow impurities in strained Ge/Ge 1−x Si x quantum well (QW) heterostructures [1][2][3]. The strain-induced valence band splitting in Ge/GeSi structures decreases the effective masses of two-dimensional holes and the binding energies of confined acceptors compared with those in bulk Ge, in contrast to the donors whose binding energy is known to increase due to additional confinement of the wave function by the QW potential.…”

Section: Introductionmentioning

confidence: 99%

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THz Spectroscopy of Extremely Shallow Acceptors States in Ge/GeSi Multiple-Quantum-Well Heterostructures

et al. 2005

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New shallow acceptor magnetoabsorption lines in THz range have been discovered under bandgap photoexcitation in strained Ge/GeSi multiple--quantum-well heterostructures. It is shown, both theoretically and experimentally, that the resonant absorption results from the photoionization of A + -centers and from 1s → 2p + -type transitions from the ground state of the barrier-situated A 0 -centers into excited states in the 1st and 2nd electronic subbands. The shallowest discovered ground acceptor states (E B ≤ 0.5 meV) are attributed to the "barrier-spaced" acceptors (a hole bound with an acceptor ion in the neighboring Ge quantum well).

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Section: Methodsmentioning

confidence: 92%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

THz Spectroscopy of Extremely Shallow Acceptors States in Ge/GeSi Multiple-Quantum-Well Heterostructures

et al. 2005

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Far-Infrared Spectroscopy of Shallow Acceptors in Strained Ge/GeSi Quantum Well Heterostructures

Aleshkin

Гавриленко

Erofeeva

et al. 1998

phys. stat. sol. (b)

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Far-infrared photoconductivity spectra of strained multi-quantum well Ge/Ge 1± ±x Si x (x % 0.1) heterostructures resulting from the excitation of shallow acceptors were investigated. The spectra are shown to be shifted to the long-wavelength end of the far-infrared range if compared with acceptors in bulk p-Ge due to the splitting of light and heavy holes subbands in Ge layers owing to thè`b uilt-inº deformation and size quantization. The shallow acceptor spectra in bulk germanium under uniaxial tension, that is``equivalentº to the deformation of Ge layers in the heterostructures, were calculated by the variational technique; the results were used for the interpretation of the experimental data. Ge/GeSi heterostructures are shown to be a sensitive photoelectric detector for the long wavelength end of FIR range.

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Cyclotron resonance of holes and shallow acceptor photoconductivity in strained MQW Ge/GeSi heterostructures in strong magnetic fields

Aleshkin¹,

Erofeeva²,

Гавриленко³

et al. 2001

Springer Proceedings in Physics

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Shallow acceptors in Ge/GeSi strained multilayer heterostructures with quantum wells

Cited by 10 publications

References 9 publications

THz Spectroscopy of Extremely Shallow Acceptors States in Ge/GeSi Multiple-Quantum-Well Heterostructures

THz Spectroscopy of Extremely Shallow Acceptors States in Ge/GeSi Multiple-Quantum-Well Heterostructures

Far-Infrared Spectroscopy of Shallow Acceptors in Strained Ge/GeSi Quantum Well Heterostructures

Cyclotron resonance of holes and shallow acceptor photoconductivity in strained MQW Ge/GeSi heterostructures in strong magnetic fields

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