Shallow acceptor complexes in p-type ZnO

Abstract

We show that N-doped ZnO films grown on sapphire can exhibit significant (∼1018 cm−3) room-temperature p-type behavior when sufficient nitrogen (N) is incorporated and the material is annealed appropriately. Substitutional N on the oxygen (O) sublattice is a deep acceptor; however, shallow acceptor complexes involve N, H, and zinc vacancies (VZn). Combining secondary ion mass spectrometry, Raman-scattering, photoluminescence, and Hall-effect data, we establish the evolution of N from its initial incorporation on a Zn site to a final shallow acceptor complex VZn_NO_H+ with an ionization energy of ca. 130 meV. This complex is responsible for the observed p-type behavior.

Deep levels and acceptors in Zn(Mg)O: effect of N-doping

“…Since there is band bending close to the interface, the hole quasi-Fermi level may be close enough to the VB to allow the E V + 0.16 eV acceptors to contribute to hole generation. This trap matches quite well that observed by Reynolds et al [119] at E V + 0. …”

“…The reports for N-induced DAP emissions continue [33, 34, 70-72, 98, 129, 131, 135, 148], with energies as low as 130 meV [119]. They attributed that acceptor level to a complex defect involving N and H, N O − V Zn − H + .…”

“…Recalling chapter 1, it can be remembered that for the case of metal organic chemical vapor deposition (MOCVD) grown ZnO:N, Reynolds et al [119] also recently observed the presence of an acceptor level with an activation energy of 150 meV, and have proposed that a V Zn −N O −H complex is responsible for its generation. Alternatively to ZnO, many groups have used MgZnO for the p-side of their p-n junctions, [40,149] among other reasons because MgZnO presents lower residual electron carrier concentrations than ZnO [37,45,75].…”

Preparation of nitrogen doped zinc oxide nanoparticles and thin films by colloidal route and low temperature nitridation process

“…Several theoretical studies [16][17][18] have pointed out that both nitrogen doping and metal vacancies may stabilize shallow acceptors levels above the valence band in ZnO, thus triggering the stabilization of a p-type conductivity. As reported in a recent work on the decomposition of ZnO 2 to prepare Zn-deficient ZnO, the nanostructuration of ZnO appears to be essential to control the metal vacancies in ZnO particles [11].…”

On Optimization of Manufacturing of a Conventional Folded Cascode Operational Amplifier Based on Heterostructures to Increase Density of their Elements. Influence of Missmatch Induced Stress and Porosity of Materials on Technological Process

“…Substitution of the relations (1e), (3e), (5e) into relation (10) gives us possibility to obtain relations for required average values α 2ρ …”