Shadow step structures for the analysis of thin film conductors

Rosvold, W.C.

doi:10.1109/vmic.1989.78031

Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference

DOI: 10.1109/vmic.1989.78031

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Shadow step structures for the analysis of thin film conductors

W.C. Rosvold¹

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Shadow Step Structures for CV Dot Formation and Evaluation

Shah

Rosvold

1991

MRS Proc.

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ABSTRACT“Shadow Step Structures” (3S) [1] are pre-patterned mesa-type geometries which are electrically self-isolating when overlayed with conducting thin films. This structure has been successfully implemented to generate CV dot structures. This CV dot structure eliminates the need for screen or photomasking after the oxide growth, thus eliminating manual handling, poor definition of dots due to “shadow screens”, and eliminates the possibility of contamination from screens and/or chemicals. This technique is very useful to qualify metal coaters as opposed to conventional techniques which involve patterning after metal deposition and has the advantage of fast turnaround and inherent cost savings. Measurement fidelity has been demonstrated via a large statistical sampling and is shown to give CV results consistently more accurate and superior to CV structures generated using the conventional techniques of metal shadow screens or photo masking.

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Shadow Step Structures for CV Dot Formation and Evaluation

Shah

Rosvold

1991

MRS Proc.

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Shadow step structures for the analysis of thin film conductors

Cited by 1 publication

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Shadow Step Structures for CV Dot Formation and Evaluation

Shadow Step Structures for CV Dot Formation and Evaluation

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