Series resistance effects in semiconductor CV profiling

Wiley, J. D.; Miller, G. L.

doi:10.1109/t-ed.1975.18117

Cited by 98 publications

(24 citation statements)

References 4 publications

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“…These deviations can be caused by a non-uniform doping concentration, a highly compensated interfacial layer being present between the metal contact(s) and TiO 2 , 47,65-67 a high density of deep defect levels not responding fully to the probe frequency, 68 or high series resistance. 69,70 Our set of data indicates that several of these causes contribute to the recorded CV characteristics, especially high series resistance and the presence of a highly compensated interfacial layer. We found that their relative contribution depends on the sample and its particular treatment.…”

Section: -5mentioning

confidence: 86%

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Influence of annealing atmosphere on formation of electrically-active defects in rutile TiO2

Zimmermann

Bonkerud

Herklotz

et al. 2018

Journal of Applied Physics

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Electronic states in the upper part of the bandgap of reduced and/or hydrogenated n-type rutile TiO2 single crystals have been studied by means of thermal admittance and deep-level transient spectroscopy measurements. The studies were performed at sample temperatures between 28 and 300 K. The results reveal limited charge carrier freeze-out even at 28 K and evidence the existence of dominant shallow donors with ionization energies below 25 meV. Interstitial atomic hydrogen is considered to be a major contributor to these shallow donors, substantiated by infrared absorption measurements. Three defect energy levels with positions of about 70 meV, 95 meV, and 120 meV below the conduction band edge occur in all the studied samples, irrespective of the sample production batch and the post-growth heat treatment used. The origin of these levels is discussed in terms of electron polarons, intrinsic point defects, and/or common residual impurities, where especially interstitial titanium atoms, oxygen vacancies, and complexes involving Al atoms appear as likely candidates. In contrast, no common deep-level defect, exhibiting a charge state transition in the 200–700 meV range below the conduction band edge, is found in different samples. This may possibly indicate a strong influence on deep-level defects by the post-growth heat treatments employed.

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Section: -5mentioning

confidence: 86%

“…We found that their relative contribution depends on the sample and its particular treatment. By using comparatively small contact areas, the effect of the high series resistance can be minimized, 69,70 and a detailed analysis of the CV characteristics and barrier heights of the Schottky junctions used in this work can be found in Ref. 48.…”

Section: -5mentioning

confidence: 99%

Influence of annealing atmosphere on formation of electrically-active defects in rutile TiO2

Zimmermann

Bonkerud

Herklotz

et al. 2018

Journal of Applied Physics

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“…Figure 2 shows the results for an infinitely thick uniformly doped n-type layer. The flat line represents N and the remaining curves No, m for different R, R, L, and L combma- 9 P . P tlons.…”

Section: Resultsmentioning

confidence: 99%

Effect of parasitics on electrochemical capacitance-voltage profiling of pseudomorphic high electron mobility transistor structures

Jogai

Stutz

1997

Journal of Elec Materi

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The effect of parasitic series resistances on electrochemical capacitance-voltage (EC-V) profiling is simulated numerically for AI~Ga 1 ~ks/In Ga 1 .As pseudomorphic high electron mobility transistor (p-HEMT) st-ructures. ~e actual EC-V measurement is simulated numerically by reconstructing the charge distribution from an intrinsic distribution calculated from a self-consistent k. p model. The calculated charge distribution then forms the basis for examining the possible profiles an EC-V measurement would produce when parasitics are taken into account. From a simple lumped-circuit model, it is shown that parasitic resistances distort the shape of the charge distribution by changing the relative heights of the 5-layer and channel charges. Hysteresis effects may also occur and may be accompanied by a change in material type from n to p even though the material is known to be n-type over the entire range of measurement. Additionally, an undesirable dependence of the charge profile on the probe signal frequency is found.

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“…[5] is o f t e n i n a c c u r a t e w h e n t h e c h a n n e l is o p e n a n d t h e gate l e n g t h is s m a l l , b e c a u s e t h e n t h e p a r a s i t i c r e s i s t a n c e m a y b e c o m p a r a b l e to t h e c h a n n e l r e s i s t a n c e (20). M o r e o v e r , n e a r p i n c h -o f f , s e r i e s r e s i s t a n c e e f f e c t s c a n d i s t o r t t h e capacitance (36). Thus, we would recommend one of the methods discussed below if a magnetic field is available.…”

Section: A P a C I T A N C E -C O N D U C T A N C E Profiiing--onementioning

confidence: 99%

Electrical Characterization of Ion Implantation into GaAs: Topography and Depth Profiles

Look

1987

J. Electrochem. Soc.

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Recent advances in the characterization of ion‐implanted normalGaAs samples have included whole wafer mapping (topography) and depth profiling techniques. We review several methods for mapping electrical parameters, including the dark‐spot resistance (DSR), and the microwave photoconductance techniques. In addition, we suggest a new photo‐Hall technique which would allow mobility (μ) and carrier‐concentration false(nfalse) mapping as well as that of resistivity (ρ). Finally, we review methods for obtaining ρ, μ, and n depth profiles, with particular emphasis on the application of the magnetoresistance techniques in actual field‐effect transistor structures.

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Series resistance effects in semiconductor CV profiling

Cited by 98 publications

References 4 publications

Influence of annealing atmosphere on formation of electrically-active defects in rutile TiO2

Influence of annealing atmosphere on formation of electrically-active defects in rutile TiO2

Effect of parasitics on electrochemical capacitance-voltage profiling of pseudomorphic high electron mobility transistor structures

Electrical Characterization of Ion Implantation into GaAs: Topography and Depth Profiles

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