Sequential synthesis of free-standing high quality bilayer graphene from recycled nickel foil

Seah, Choon-Ming; Vigolo, Brigitte; Chai, Siang‐Piao; Ichikawa, Satoshi; Gleize, Jérôme; Normand, F. Le; Aweke, Fitsum; Mohamed, Abdul Rahman

doi:10.1016/j.carbon.2015.09.073

Cited by 29 publications

(25 citation statements)

References 44 publications

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“…This situation is analogous to catalyst poisoning or coking mechanisms in classical heterogeneous catalysis. 112 We emphasize that this highly bulk supersaturated nature at all processing stages and the intrinsically high carbon arrival rates from the surroundings are hallmark features of the thermal evolution mechanism in such metal/carbon nanocomposites, which clearly separates this class of materials from other metal–carbon systems where carbon influx to the interface can be controlled at lower rates, such as in balanced heterogeneous catalysis reactions 112 , 113 or graphene 35 − 42 and CNT 45 − 59 growth from Ni catalysts.…”

Section: Discussionmentioning

confidence: 97%

In Situ Observations of Phase Transitions in Metastable Nickel (Carbide)/Carbon Nanocomposites

Bayer¹,

Bosworth²,

Michaelis³

et al. 2016

J. Phys. Chem. C

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Nanocomposite thin films comprised of metastable metal carbides in a carbon matrix have a wide variety of applications ranging from hard coatings to magnetics and energy storage and conversion. While their deposition using nonequilibrium techniques is established, the understanding of the dynamic evolution of such metastable nanocomposites under thermal equilibrium conditions at elevated temperatures during processing and during device operation remains limited. Here, we investigate sputter-deposited nanocomposites of metastable nickel carbide (Ni3C) nanocrystals in an amorphous carbon (a-C) matrix during thermal postdeposition processing via complementary in situ X-ray diffractometry, in situ Raman spectroscopy, and in situ X-ray photoelectron spectroscopy. At low annealing temperatures (300 °C) we observe isothermal Ni3C decomposition into face-centered-cubic Ni and amorphous carbon, however, without changes to the initial finely structured nanocomposite morphology. Only for higher temperatures (400–800 °C) Ni-catalyzed isothermal graphitization of the amorphous carbon matrix sets in, which we link to bulk-diffusion-mediated phase separation of the nanocomposite into coarser Ni and graphite grains. Upon natural cooling, only minimal precipitation of additional carbon from the Ni is observed, showing that even for highly carbon saturated systems precipitation upon cooling can be kinetically quenched. Our findings demonstrate that phase transformations of the filler and morphology modifications of the nanocomposite can be decoupled, which is advantageous from a manufacturing perspective. Our in situ study also identifies the high carbon content of the Ni filler crystallites at all stages of processing as the key hallmark feature of such metal–carbon nanocomposites that governs their entire thermal evolution. In a wider context, we also discuss our findings with regard to the much debated potential role of metastable Ni3C as a catalyst phase in graphene and carbon nanotube growth.

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Section: Discussionmentioning

confidence: 97%

In Situ Observations of Phase Transitions in Metastable Nickel (Carbide)/Carbon Nanocomposites

Bayer¹,

Bosworth²,

Michaelis³

et al. 2016

J. Phys. Chem. C

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“…The transfer of graphene from the original to the arbitrary substrate without deteriorating the crystallinity of the graphene is still a challenging task [ 17 ]. Currently, there are two main approaches for the transfer of graphene.…”

Section: Methodsmentioning

confidence: 99%

Nitrogen-doped twisted graphene grown on copper by atmospheric pressure CVD from a decane precursor

Komissarov¹,

Kovalchuk²,

Лабунов³

et al. 2017

Beilstein J. Nanotechnol.

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We present Raman studies of graphene films grown on copper foil by atmospheric pressure CVD with n-decane as a precursor, a mixture of nitrogen and hydrogen as the carrier gas, under different hydrogen flow rates. A novel approach for the processing of the Raman spectroscopy data was employed. It was found that in particular cases, the various parameters of the Raman spectra can be assigned to fractions of the films with different thicknesses. In particular, such quantities as the full width at half maximum of the 2D peak and the position of the 2D graphene band were successfully applied for the elaborated approach. Both the G- and 2D-band positions of single layer fractions were blue-shifted, which could be associated with the nitrogen doping of studied films. The XPS study revealed the characteristics of incorporated nitrogen, which was found to have a binding energy around 402 eV. Moreover, based on the statistical analysis of spectral parameters and the observation of a G-resonance, the twisted nature of the double-layer fraction of graphene grown with a lower hydrogen feeding rate was demonstrated. The impact of the varied hydrogen flow rate on the structural properties of graphene and the nitrogen concentration is also discussed.

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“…The most frequently used transfer printing method includes CVD synthesis and mechanical exfoliation. The former can be implemented by first synthesizing graphene sheets on Cu or nickel foil (even directly on sapphire substrate), and then transferring them via dry or wet transfer techniques onto the target substrate for vdWE of III‐nitrides. In addition, graphene sheets can also be exfoliated mechanically from graphite .…”

Section: Vdwe Based On Graphenementioning

confidence: 99%

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

Wang

Hao

et al. 2019

Advanced Materials

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to 6.2 eV for AlN, [3] which spans the entire ultraviolet and visible band [4][5][6][7] as well as the near-infrared region. [8,9] Accordingly, III-nitrides have been widely adopted for the fabrication of light-emitting diodes (LEDs), [10][11][12] laser diodes (LDs), [13][14][15] photodetectors (PDs), [16][17][18] and solar cells. [19][20][21] Furthermore, the spontaneous and piezoelectric polarization in wurtzite semiconductors [22][23][24][25] and the high electron drift velocities [26][27][28] can be used to fabricate high electron mobility transistors based on two-dimensional (2D) electron gas (2DEG) in AlGaN/GaN heterostructures. [29][30][31][32] At present, by employing metal organic chemical vapor deposition (MOCVD), [3,[33][34][35] molecular beam epitaxy (MBE), [36][37][38][39] or hydride vapor phase epitaxy (HVPE), [40][41][42] III-nitride films with high crystalline quality can be obtained on c-plane sapphire, [43][44][45] Si (111), [38,[46][47][48] or 6H-SiC [49][50][51] substrates at a high growth temperature, usually above 1000 °C. [52][53][54] However, exfoliating III-nitride films from such single-crystalline substrates proves difficult because of the strong sp 3 -type covalent bonds between the substrates and epilayers. [55] To overcome this problem, thermal release through laser radiation, [56,57] stamp-based printing, [58,59] chemical etching, [60][61][62][63][64][65][66][67] and mechanical exfoliation [54,55,68,69] from singlecrystalline substrates have been investigated. However, there still remain some bottlenecks for future applications, such as damage, limited size, and tedious steps of the flexible production process. [55] Furthermore, flexible amorphous substrates generally cannot tolerate such high growth temperature, [54] and cannot be used for epitaxial growth of single-crystalline films because of the unordered surface atomic arrangement. [70,71] Hence, it is extremely difficult to make allowance for wearable and foldable applications of next-generation (opto)electronic devices based on III-nitrides. [72] On the other hand, sp 2 -bonded 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) exhibit hexagonal in-plane lattice arrangements and weakly bonded layers. [54,73,74] If sp 3 -bonded III-nitride films can somehow be grown on sp 2 -bonded 2D materials, it is theoretically possible to transfer these functional films onto foreign flexible substrates because of the weak van der Waals interactions on both sides of the 2D materials. [68,75,76] In this case, the 2D materials not only act as a buffer layer but also provide a release layer for the mechanical exfoliation of solid-state lighting, flat-panel displays, and solar energy and power electronics. Generally, GaN-based devices are heteroepitaxially grown on c-plane sapphire, Si (111), or 6H-SiC substrates. However, it is very difficult to release the GaN-based films from such single-crystalline substrates and transfer them onto other foreign substrates. Consequently, it is difficult to meet t...

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Sequential synthesis of free-standing high quality bilayer graphene from recycled nickel foil

Cited by 29 publications

References 44 publications

In Situ Observations of Phase Transitions in Metastable Nickel (Carbide)/Carbon Nanocomposites

In Situ Observations of Phase Transitions in Metastable Nickel (Carbide)/Carbon Nanocomposites

Nitrogen-doped twisted graphene grown on copper by atmospheric pressure CVD from a decane precursor

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

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