Sequential pulsed laser deposition of CdxZn1-xO alloy thin films for engineering ZnO band gap

Misra, Pankaj; Sahoo, Pratap K.; Tripathi, Pragya; Kulkarni, V. N.; Nandedkar, R. V.; Kukreja, L. M.

doi:10.1007/s00339-003-2296-0

Cited by 45 publications

(21 citation statements)

References 13 publications

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“…GaN ¼ 25 meV), respectively, allow stimulated emission to be obtained above room temperature. The band gap can be either decreased or increased by alloying with CdO [2] or MgO [3,4], respectively. Alloys with MnO have been investigated theoretically [5] and experimentally [6,7] for their potential as dilute magnetic semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Growth of dense ZnO films via MOVPE on GaN(0001) epilayers using a low/high-temperature sequence

Pierce

Adekore

Davis

et al. 2005

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Growth of dense ZnO films via MOVPE on GaN(0001) epilayers using a low/high-temperature sequence

Pierce

Adekore

Davis

et al. 2005

Journal of Crystal Growth

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“…To decrease the ZnO band gap, its alloying with CdO has been studied by Makino et al [9]. We have adopted a novel sequential ablation scheme of PLD [10] to grow CdZnO alloy films. An alternative to alloying is to exploit the size dependence of the band gap in the quantum confinement regime [11].…”

Section: Introductionmentioning

confidence: 99%

Variable band gap ZnO nanostructures grown by pulsed laser deposition

Kukreja

Barik

Misra

2004

Journal of Crystal Growth

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“…Doping of valency two metals viz. Mg [2,4], Ca [3], Sr [5]; and Cd [6,7] has been reported which affects the optical band gap of zinc oxide in exactly opposite ways as Cd decreases the band gap. Combined, this provides a consider− able range of band gap tuning, thereby opening a gateway for tuneable light sources.…”

Section: Introductionmentioning

confidence: 99%

Enhancement in UV emission and band gap by Fe doping in ZnO thin films

Srivastava

Kumar

Khare

2014

Opto-Electronics Review

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Enhancement of the optical band gap of ZnO from 3.14 to 3.29 eV has been obtained using Fe dopant. Undoped and doped ZnO films are deposited by sol-gel spin coating. XRD patterns indicate polycrystalline nature and hexagonal wurtzite structure of Zn1−xFexO films. EDX analysis confirms the presence of iron dopant. The photoluminescence spectra show an ultraviolet emission peak at 398 nm (NBE emission) and defect emission peak at 485 nm. Intensity of the NBE emission is much higher for the doped samples with its ratio to defect emission intensity highest for 2 at. %doping. The NBE emission shifts to higher energy with increasing dopant concentration in a manner similar to that exhibited by the band gap. Surface morphology has been studied using FESEM.

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Sequential pulsed laser deposition of CdxZn1-xO alloy thin films for engineering ZnO band gap

Cited by 45 publications

References 13 publications

Growth of dense ZnO films via MOVPE on GaN(0001) epilayers using a low/high-temperature sequence

Growth of dense ZnO films via MOVPE on GaN(0001) epilayers using a low/high-temperature sequence

Variable band gap ZnO nanostructures grown by pulsed laser deposition

Enhancement in UV emission and band gap by Fe doping in ZnO thin films

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