Sequential PPC and process-window-aware mask layout synthesis

Sezginer, Apo; Zach, Franz X.; Yenikaya, Bayram; Carrero, Jesus; Huang, Hsu-Ting

doi:10.1117/12.656667

Cited by 5 publications

(3 citation statements)

References 13 publications

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“…Percin et al provided an example of etch physics embedded in some manner in edge placement models. 10 Models for the etch process could be derived from experiments and based in simple phenomenological etch models as in Senziger et al 11 Phenomenological etch models had been extremely successful in explaining important through pitch etch (line and space) behavior such as "RIE" Lag. 12 In this sense, the efficacy of incorporating phenomenological etch models as described by Senziger et al was not surprising.…”

Section: Kernels and Model Based Approaches Accounting For Etchmentioning

confidence: 99%

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Etch aware computational patterning in the era of atomic precision processing

Ventzek

Shinagawa

Ranjan

2019

Advanced Etch Technology for Nanopatterning VIII

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Etch processes have always involved inherent process trade-offs related to fundamental plasma parameters to achieve planar patterning metrics related to damage, aspect ratio dependences and profile. Today, we are in a new era of "area selective etch." Advanced patterning (SAXP, (LELE) n), logic, memory and interconnect applications beyond 3 nm involve, in one way or another, topographies that require etch "control" at every surface. Achieving profile specifications will require the ability to conjure isotropy control at will. Vehicles to achieving this include novel precursors and hybrid processes involving combinations of deposition and plasma etch as we know it. Ultimately, to differentiate surfaces comprising silicon, silicon oxides and nitrides, and organics require active modification at the first surface reactive monolayer to be able to differentiate them in each process step with respect to any surface normal on the wafer plane. This presentation will start with a review of today's state-of-the-art means for atomic precision processing of surfaces. A simulation science perspective to process integration modeling introduces methods for surface chemistry control that lend themselves to achieving area selective etch. In the end, surface chemistry control is not a cure-all. Finally, a combination of plasma diagnostics and simulation will be needed to assist plasma process controls for scaling at 3 nm and beyond.

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Section: Kernels and Model Based Approaches Accounting For Etchmentioning

confidence: 99%

“…12 In this sense, the efficacy of incorporating phenomenological etch models as described by Senziger et al was not surprising. 11 This approach, however, relies on the etch step being a single step or, if multi-step, that only one etch step dominated the edge variations or CD bias of the many.…”

Section: Kernels and Model Based Approaches Accounting For Etchmentioning

confidence: 99%

Etch aware computational patterning in the era of atomic precision processing

Ventzek

Shinagawa

Ranjan

2019

Advanced Etch Technology for Nanopatterning VIII

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“…3) Recently, process proximity correction (PPC) technology which is one of the capable candidates to minimize pattern-to-pattern CD variation was examined to compensate CD bias dependence on pattern dimension in etching process. 4,5) PPC is the model based method by correcting mask layout, and it needs accurate model to predict CD bias from pattern dimension based on the mechanism of each etching process.…”

Section: Introductionmentioning

confidence: 99%

Improvement of Pattern-to-Pattern Critical Dimension Variation by Model Based Method in Gate Polycrystalline Silicon Etching Process

Tamura¹,

Yoshioka²,

Ohmori³

et al. 2009

Jpn. J. Appl. Phys.

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In this study, we investigated the dependence of critical dimension (CD) bias on pattern dimension (width, space and pitch) in detail and quantitatively in gate etch process. The mechanism of CD bias dependence was estimated from the characteristic of each etching step. Based on the etching mechanism, the numerical model was generated by using linear combination of functions of pattern dimension which have strong correlation to CD bias dependence. For the purpose of improving the pattern-to-pattern gate CD variation, the correction of line width of mask was carried out to compensate CD bias dependence by using this model. This model accurately predicted CD bias dependence, and pattern-to-pattern CD variation was improved in gate etch process successfully.

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