Semiconductors based on Bi element show large attenuation coefficients to X-ray photons and have been recognized as candidates for X-ray detectors. However, the application of stable Bi-based oxide materials to X-ray detectors has been rarely investigated. In this research, the X-ray response of a BiVO 4 pellet has been studied. It has been found that the BiVO 4 pellet has a large resistivity of 1.3 × 10 12 Ω cm, negligible current drift of 6.18 × 10 −8 nA cm −1 s −1 V −1 under electrical bias and mobility lifetime product, µτ, of 1.75 × 10 −4 cm 2 V −1 , which renders the pellet with an X-ray sensitivity of 241.3 µC Gy air −1 cm −2 and a detection limit of 62 nGy air s −1 under 40 KVp X-ray illumination and 40 V bias voltage. The BiVO 4 pellet also shows operational stability under steady X-ray illumination with total dose of 2.01 Gy air , equal to the dose of 20 000 medical chest X-ray inspections. This research reveals the potential application of BiVO 4 in X-ray detection devices and inspires further research in this area.