2003
DOI: 10.1063/1.1566451
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Sequence of Mg segregation, grain growth, and interfacial MgO formation in Cu–Mg alloy films on SiO2 during vacuum annealing

Abstract: Cu-alloy films are being explored for integrated circuits, for creating low-resistivity interconnects with stabilized metal/dielectric interfaces via solute segregation, and for interfacial reactions. Here, we describe the pathways of microstructure evolution in supersaturated Cu– 5–12 at. % Mg films, and phase formation at the film/SiO2 interface during annealing. The as-deposited films consist primarily of a Cu–Mg solid solution with trace amounts of orthorhombic CuMg2. Upon annealing to 400 °C, Mg segregate… Show more

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Cited by 55 publications
(29 citation statements)
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“…[8][9][10][11][12][13] This technique is called "self-formation of the barrier layer" and is attractive to apply to the Cu wires. The self-formation of the barrier layers was observed in bulk alloy when the alloy elements formed solid solution at elevated temperatures and separated into two phases at low temperatures.…”
Section: Introductionmentioning
confidence: 98%
See 1 more Smart Citation
“…[8][9][10][11][12][13] This technique is called "self-formation of the barrier layer" and is attractive to apply to the Cu wires. The self-formation of the barrier layers was observed in bulk alloy when the alloy elements formed solid solution at elevated temperatures and separated into two phases at low temperatures.…”
Section: Introductionmentioning
confidence: 98%
“…were extensively investigated for the possibility of the self-formation of the passivation (interfacial barrier) layers to improve surface corrosion (oxidation), electrical resistivity, adhesion, reliability, and intermixing. [8][9][10][11][12][13][14][15][16][17] However, high-temperature annealing (Ͼ500°C) for the barrier formation was required, which resulted in deterioration of the device performance and reliability. Therefore, in order to develop a low-temperature annealing (at ϳ400°C) technique for the self-formation of the barrier layer, understanding of the segregation property in the Cu alloy films is important.…”
Section: Introductionmentioning
confidence: 99%
“…[8][9][10][11][12][13] This technique is conventionally called self-formation of the barrier layer, and application of this technique to the fabrication process of Cu interconnects is attractive. We recently succeeded in forming Ti-rich barrier layers using Cu(Ti) alloy films prepared on SiO 2 /Si substrates after annealing at 400°C.…”
Section: Introductionmentioning
confidence: 99%
“…The selfformed thin barrier layers using Cu alloys with various low concentration solutes were extensively studied by various authors. [6][7][8][9][10][11][12] The self-formation of the surface/interfacial layers is one of the coating techniques peculiar to thin films and was applied to prepare the self-passivation (or interfacial barrier) layers to protect surface corrosion and oxidation (or enhance interfacial adhesion). [6][7][8][9][10][11][12][13] Among the dilute Cu alloys, the copper (titanium) [Cu(Ti)] alloy is the best candidate material for the self-formation of the barrier layers, because the solubility limit of titanium (Ti) in Cu is very small (~0.5 at.% at 500°C), as shown in an equilibrium Cu-Ti phase diagram for Cu-rich alloys (Fig.…”
Section: Introductionmentioning
confidence: 99%