2009 International Semiconductor Conference 2009
DOI: 10.1109/smicnd.2009.5336550
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Sensor system for on-line monitoring of cell cultures

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“…The microprobe fabrication steps are presented below and are represented in Figure 2:

Silicon wafers, n<100>, ρ = 3 Ωcm

Silicon oxidation, x ox = 1,6 μm [Figure 2(a)]

Resist Spin coating t resist = 4 μm

Photoresist patterning (UV, E = 100 mJ/cm 2 , t dev = 30 s), Mask 1 [Figure 2(a)]

Ti/Pt 15 nm/200 nm deposition [Figure 2(b)]

Photoresist removal [Figure 2(c)]

Si 3 N 4 deposition and patterning for opening contact windows between cells and electrodes and the opening the interchip for allowing the silicon anisotropic etching from the front size. Mask 2 [Figure 2(c)]

Backside oxide patterning and anisotropic etching for microprobe release and thinning [11,12], t etching = 400 min, T = 80 °C in TMAH, Mask 3 [Figure 2(c)]
…”
Section: Methodsmentioning
confidence: 99%
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“…The microprobe fabrication steps are presented below and are represented in Figure 2:

Silicon wafers, n<100>, ρ = 3 Ωcm

Silicon oxidation, x ox = 1,6 μm [Figure 2(a)]

Resist Spin coating t resist = 4 μm

Photoresist patterning (UV, E = 100 mJ/cm 2 , t dev = 30 s), Mask 1 [Figure 2(a)]

Ti/Pt 15 nm/200 nm deposition [Figure 2(b)]

Photoresist removal [Figure 2(c)]

Si 3 N 4 deposition and patterning for opening contact windows between cells and electrodes and the opening the interchip for allowing the silicon anisotropic etching from the front size. Mask 2 [Figure 2(c)]

Backside oxide patterning and anisotropic etching for microprobe release and thinning [11,12], t etching = 400 min, T = 80 °C in TMAH, Mask 3 [Figure 2(c)]
…”
Section: Methodsmentioning
confidence: 99%
“…Backside oxide patterning and anisotropic etching for microprobe release and thinning [ 11 , 12 ], t etching = 400 min, T = 80 °C in TMAH, Mask 3 [ Figure 2(c) ]…”
Section: Methodsmentioning
confidence: 99%
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