2000
DOI: 10.1002/1521-4095(200009)12:18<1315::aid-adma1315>3.0.co;2-k
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Sensor Functionalities in Self-Assembled Monolayers

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Cited by 386 publications
(144 citation statements)
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“…Both techniques have been widely used, in either the presence or the absence of a redox probe, on one hand to determine the size and number of defects in the SAM, and on the other to evaluate the double layer capacitance of the modified electrode and whence the average thickness of the organic layer. 46,47 Though in CV large potential sweeps (of the order of 0.1 to 1 V) are applied to the electrode/solution interface and the resulting dc current is measured, in EIS the interface is usually kept at its rest potential and probed by using a smallamplitude (typically e20 mV) sinusoidal voltage. Hence EIS is a much less disturbing technique than CV.…”
Section: Xps Analysismentioning
confidence: 99%
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“…Both techniques have been widely used, in either the presence or the absence of a redox probe, on one hand to determine the size and number of defects in the SAM, and on the other to evaluate the double layer capacitance of the modified electrode and whence the average thickness of the organic layer. 46,47 Though in CV large potential sweeps (of the order of 0.1 to 1 V) are applied to the electrode/solution interface and the resulting dc current is measured, in EIS the interface is usually kept at its rest potential and probed by using a smallamplitude (typically e20 mV) sinusoidal voltage. Hence EIS is a much less disturbing technique than CV.…”
Section: Xps Analysismentioning
confidence: 99%
“…47,48 Figure 6a shows the impedance spectra obtained at various potentials: the incomplete semicircles that rapidly shrink upon increasing overpotential (under the present conditions, the open circuit potential, E oc , coincides with E°[ Fe(CN6)] 3-/4-) 0.18 V) are associated with the slow electron transfer kinetics experienced by the redox probe at the modified electrode. [46][47][48] An alternative presentation of the impedance data is shown in Figure 6b where the complex capacitance C is displayed (C plot). C is defined as 1/jωZ, where j ) -1 1/2 and ω is the angular frequency ()2πf).…”
Section: Xps Analysismentioning
confidence: 99%
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“…[1][2][3][4][5] SAM functionalization provides a powerful, yet simple way to manipulate the chemical, electrical and optical properties of surfaces, with the ability to tune the material's macroscopic properties. 6 This is the case for dye-sensitized solar cells (DSCs) where a SAM of dye molecules sensitizes a semiconductor in order to harvest light.…”
Section: Introductionmentioning
confidence: 99%
“…22 The electrochemical properties of the 1-functionalized SAMs were then investigated by EIS, a technique that has been widely used to determine the size and number of defects in a SAM, and to estimate the average thickness of an organic layer from the evaluation of the double-layer capacitance of the modified interface. 21,23 Although in cyclic voltammetry (CV) large potential sweeps (on the order of 0.1 -1 V) are applied to the electrode/solution interface and the resulting dc current is measured, in EIS the interface is usually kept at its rest potential and probed by using a small-amplitude (typically e20 mV) Figure 4 shows the impedance spectra of the physisorbed 1 and the chemisorbed 1 on the SAM/gold electrode in both the absence and, in the latter case, presence of a redox probe (1 mM [Fe(CN) 6 ] 3-/4-) in solution. We present the complex capacitance C (c-plot), defined as 1/jωZ, where Z is the interface (complex) impedance, a parametric function of the frequency f, j ) -1, and ω is the angular frequency ()2πf).…”
Section: Resultsmentioning
confidence: 99%