Sensitized Yb<sup>3+</sup> Luminescence in CsPbCl<sub>3</sub> Film for Highly Efficient Near‐Infrared Light‐Emitting Diodes

Ishii, Ayumi; Miyasaka, Tsutomu

doi:10.1002/advs.201903142

Cited by 58 publications

(53 citation statements)

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“…Colloidal HP NCs, pristine [68][69][70] or metal-doped [71][72][73][74] , have recently attracted attention due to their advantages of quantum confined emission and low defect density with no shell passivation requirements 68 . NIR-PeLEDs based on FAPbI 3 NCs exhibited peak emission at 780 nm with an EQE of 2.3% 69 , whereas those using Cs x FA 1-x Pb(Br 1-y I y ) 3 NCs exhibited a narrow (FWHM ~ 27 nm) NIR emission at 735 nm with an EQE of 5.9% 70 .…”

Section: The Emergence Of Nir Perovskite Light-emitting Diodesmentioning

confidence: 99%

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Advances in solution-processed near-infrared light-emitting diodes

et al. 2021

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Near-infrared light-emitting diodes based on solution-processed semiconductors, such as organics, halide perovskites and colloidal quantum dots, have emerged as a viable technological platform for biomedical applications, night vision, surveillance and optical communications. The recently gained increased understanding of the materials structure-photophysical property relationship has enabled the design of efficient emitters leading to devices with external quantum efficiencies exceeding 20%. Despite significant strides made, challenges remain in achieving high radiance, reducing efficiency roll-off, and extending operating lifetime. This review summarizes recent advances on emissive materials synthetic methods and device key attributes that collectively contribute to improved performance of the fabricated light-emitting devices.Light-emitting diodes (LEDs) with emission in the near-infrared (NIR) part of the spectrum (700-2500 nm) (termed as NIR-LEDs) support a large variety of applications such as optical diagnosis and biomedical imaging 1 , optical communication, remote sensing, security, night vision and data storage 2 .The specific application field determines the spectral range of interest within the NIR (Fig. 1a). With regard to in vivo bioimaging, the semi-transparency of biological tissues, oxygenated and deoxygenated blood in specific NIR wavelength regions, also known as biological windows, makes NIR particularly appealing for optical imaging, biomedical sensing and photodynamic therapy. In the field of optical wireless communications, the spectral range is also divided in bands, which correlate with the wavelength regions where optical fibres have small transmission losses 3 . NIR-LEDs are also in demand 3 for security authentication, optogenetics, life-cycle management of crops, light fidelity and surveillance 4 .Common NIR-LEDs are epitaxial heterostructures of III-V inorganic semiconductors (e.g. GaAs, InGaAs, InGaAlAs) [5][6][7] . Commercially available products also employ inorganic phosphors, namely compounds doped with transition metals 8 , or rare-earth trivalent ions 9 . An external quantum efficiency (EQE) of 72% at 880 nm has been reported for an AlGaAs/GaAs/AlGaAs III-V-LED 6 , and 44.5% at 775 nm for LEDs based on LaMgGa 11 O 19 :Cr 3+ phosphors 10 . However, III-V LEDs require post fabrication substrate replacement with high reflective mirror structures to increase their poor power output originating from the refractive index mismatch between those materials (>3.0) 7 and common substrates.Additionally, inorganic phosphors require very high temperature sintering treatment (above 1000 o C).These processing requirements are an obstacle for low-cost, handheld portable implementations. Organic (OSCs) 11 , metal-halide perovskite (HPs) 12 , and colloidal quantum dot (QD) 13 semiconductors, can be processed using low cost and low temperature methods on a wide variety of substrates. For example via solution-based processes such as ink-jet printing, doctor blade and spray coating (Fig. 1b). These...

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Section: The Emergence Of Nir Perovskite Light-emitting Diodesmentioning

confidence: 99%

“…Notably, the hybrid perovskite:metal NCs can achieve deeper NIR emission as they rely on energy transfer from the perovskite to the metal and emission therefrom 73 . As an example, ytterbium (Yb 3+ )-doped CsPbCl 3 NCs showed NIR emission at 984 nm (EQE of 5.9%) 74 .…”

Section: The Emergence Of Nir Perovskite Light-emitting Diodesmentioning

confidence: 99%

Advances in solution-processed near-infrared light-emitting diodes

et al. 2021

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“…As demonstrated by Gamelin et al, LHP hosts doped with ytterbium ions can reach staggering 170% PLQYs in the NIR ( Milstein et al., 2018 ). The underlying quantum cutting has been applied to lead-containing NIR LEDs by Tom Miyasaka, reaching an outstanding 5.9% EQE at 984 nm ( Ishii and Miyasaka, 2020 ; Righetto et al., 2020a ). Future work will certainly focus on reproducing similar results with lead-free perovskites.…”

Section: State-of-the-art Nir-emitting Materialsmentioning

confidence: 99%

Non-toxic near-infrared light-emitting diodes

et al. 2021

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Harnessing cost-efficient printable semiconductor materials as near-infrared (NIR) emitters in light-emitting diodes (LEDs) is extremely attractive for sensing and diagnostics, telecommunications, and biomedical sciences. However, the most efficient NIR LEDs suitable for printable electronics rely on emissive materials containing precious transition metal ions (such as platinum), which have triggered concerns about their poor biocompatibility and sustainability. Here, we review and highlight the latest progress in NIR LEDs based on non-toxic and low-cost functional materials suitable for solution-processing deposition. Different approaches to achieve NIR emission from organic and hybrid materials are discussed, with particular focus on fluorescent and exciplex-forming hostguest systems, thermally activated delayed fluorescent molecules, aggregation-induced emission fluorophores, as well as lead-free perovskites. Alternative strategies leveraging photonic microcavity effects and surface plasmon resonances to enhance the emission of such materials in the NIR are also presented. Finally, an outlook for critical challenges and opportunities of non-toxic NIR LEDs is provided.

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“…Here, we achieved high NIR luminesce of Yb 3+ sensitized by a CsPbCl3 crystalline film with high charge-carrier mobility and wellbalanced charge injection, resulting in Yb 3+ :CsPbCl3-based NIR LEDs with a high EQE value. 49 Figure 4a shows photoluminescence spectra of Yb 3+ :CsPbCl3 films. The Yb 3+ -doped CsPbCl3 thin film was fabricated by a multistep solution-process to obtain a 120-nm-thick highly transparent thin film (93% transmittance, Fig.…”

Section: Development Of Dye-sensitized Up-conversion Nanoparticles and Their Application In Nearinfrared Photodetectorsmentioning

confidence: 99%

Development of Photofunctional Devices Based on Organic–Inorganic Hybrid Structures

Ishii¹

2021

Electrochemistry

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In this research, organic-inorganic hybrid materials that enable the detection and manipulation of "invisible light" such as weak light, polarized light, and near-infrared (NIR) light are prepared and optoelectronic devices based on these materials are developed. The photoelectric conversion or energy transfer process resulting from light absorption is precisely controlled at the heterointerface of organicinorganic hybrid structures, which enables the highly efficient amplification, conversion, and detection of invisible light under normal temperatures and pressures. Here, novel optical functions and devices based on organic-inorganic hybrid structures and interfaces are presented. For instance, in a hybrid structure in which organic molecules and inorganic semiconductors are chemically bonded, photocurrent was amplified more than 2000-fold at their heterointerface, resulting in highly sensitive photodetection at a low voltage (<1V). As a novel device structure for the direct detection of circularly polarized light with high sensitivity, an inorganic crystal thin film with a one-dimensional helical structure was fabricated via interaction with organic chiral molecules. For NIR light, dye-sensitized up-conversion nanoparticles that can convert NIR light as weak as sunlight into visible light with high efficiency were developed and incorporated into a perovskite-based visible-light detector. This device detected light in the NIR region through energy conversion from NIR to visible light. NIR light was promoted as ultrabright luminescence by one-photon absorption two-photon emission (quantum-cutting) process in heterometal hybridized crystal thin films. A light-emitting diode was fabricated and demonstrated 6% external conversion efficiency of field emission in the NIR region.

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Sensitized Yb³⁺ Luminescence in CsPbCl₃ Film for Highly Efficient Near‐Infrared Light‐Emitting Diodes

Cited by 58 publications

References 50 publications

Advances in solution-processed near-infrared light-emitting diodes

Advances in solution-processed near-infrared light-emitting diodes

Non-toxic near-infrared light-emitting diodes

Development of Photofunctional Devices Based on Organic–Inorganic Hybrid Structures

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Sensitized Yb3+ Luminescence in CsPbCl3 Film for Highly Efficient Near‐Infrared Light‐Emitting Diodes

Cited by 58 publications

References 50 publications

Advances in solution-processed near-infrared light-emitting diodes

Advances in solution-processed near-infrared light-emitting diodes

Non-toxic near-infrared light-emitting diodes

Development of Photofunctional Devices Based on Organic–Inorganic Hybrid Structures

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Product

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Sensitized Yb³⁺ Luminescence in CsPbCl₃ Film for Highly Efficient Near‐Infrared Light‐Emitting Diodes