Sensitized electroluminescence from erbium doped silicon rich oxynitride light emitting devices

Xu, Lingbo; Piao, Hongjing; Liu, Zhiyuan; Cui, Can; Yang, Deren

doi:10.1016/j.jlumin.2021.118009

Cited by 5 publications

(3 citation statements)

References 61 publications

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“…Therefore, the codoped SiNCs exhibited negative surface potential, which guaranteed the electrostatic repulsion for the high stability and dispersibility in methanol (Sugimoto et al, 2012). Besides, metal elements could also function as dopants (Wang et al, 2020;Xu et al, 2021a high QY of 26% for codoping (Chandra et al, 2017). The metal elements within the SiNCs created new impurity states near the valence band, which resulted in the redshift of PL.…”

Section: Compositionmentioning

confidence: 99%

Thermal Disproportionation for the Synthesis of Silicon Nanocrystals and Their Photoluminescent Properties

Wang

Hong

et al. 2021

Front. Chem.

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In the past decades, silicon nanocrystals have received vast attention and have been widely studied owing to not only their advantages including nontoxicity, high availability, and abundance but also their unique luminescent properties distinct from bulk silicon. Among the various synthetic methods of silicon nanocrystals, thermal disproportionation of silicon suboxides (often with H as another major composing element) bears the superiorities of unsophisticated equipment requirements, feasible processing conditions, and precise control of nanocrystals size and structure, which guarantee a bright industrial application prospect. In this paper, we summarize the recent progress of thermal disproportionation chemistry for the synthesis of silicon nanocrystals, with the focus on the effects of temperature, Si/O ratio, and the surface groups on the resulting silicon nanocrystals’ structure and their corresponding photoluminescent properties. Moreover, the paradigmatic application scenarios of the photoluminescent silicon nanocrystals synthesized via this method are showcased or envisioned.

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Section: Compositionmentioning

confidence: 99%

Thermal Disproportionation for the Synthesis of Silicon Nanocrystals and Their Photoluminescent Properties

Wang

Hong

et al. 2021

Front. Chem.

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“…34−36 At the quantum confinement phase space, it has been one of the most widely studied systems both experimentally as well as computationally. [36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51][52][53][54]68,69 While, experimentally, Si has been evidenced to bond with several main group elements such as boron, carbon, nitrogen, oxygen, etc., a bond with the Be atom is one of the most unprecedented ones so far. While its high ionization potentials and small size result in Be forming covalent bonds with many elements, B−Si bonds are quite rare.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Silicon, being the earth’s most abundant element, has not been left behind in this context and has been reported to participate in distinctive or multiple bonding with itself as well as with other heavier elements. − At the quantum confinement phase space, it has been one of the most widely studied systems both experimentally as well as computationally. − ,, While, experimentally, Si has been evidenced to bond with several main group elements such as boron, carbon, nitrogen, oxygen, etc., a bond with the Be atom is one of the most unprecedented ones so far. While its high ionization potentials and small size result in Be forming covalent bonds with many elements, B–Si bonds are quite rare.…”

Section: Introductionmentioning

confidence: 99%

Understanding the Stability of an Unprecedented Si–Be Bond within Quantum Confinement

2023

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As of today, the Si–Be bond remains underexplored in the literature, and therefore its anomalous behavior continues to be an unsolved puzzle to date. Therefore, the present study aims at evaluating the integrity of an unprecedented Si–Be bond within quantum confinement. To accomplish this, first-principles-based calculation are performed on Be-doped silicon clusters with atomic sizes 6, 7, and 10. Silicon clusters are sequentially doped with one, two, and three Be atoms, and their thermal response is registered in the temperature range of 200–1500 K, which discloses several research findings. During the course of the simulations, the clusters face various thermal events such as solid cluster phase, rapid structural metamorphosis, and fragmentation. Si–Be nanoalloy clusters are noted to be thermally stable at lower temperatures (200–700 K); however, they begins to disintegrate earlier at a temperature as low as 800 K. This lower stability is attributed to the weak nature of Si and Be heteroatomic interactions, which is corroborated from the structural and electronic property analysis of the doped clusters. In addition to this, the performance of Be-doped clusters at finite temperatures is also compared with the thermal response of two other popular systems, viz., C- and B-doped silicon clusters.

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Assessing the key parameters for efficient sensitized infrared emission from erbium-doped SnO2 films

Xu,

Hou,

Piao

et al. 2024

Ceramics International

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Sensitized electroluminescence from erbium doped silicon rich oxynitride light emitting devices

Cited by 5 publications

References 61 publications

Thermal Disproportionation for the Synthesis of Silicon Nanocrystals and Their Photoluminescent Properties

Thermal Disproportionation for the Synthesis of Silicon Nanocrystals and Their Photoluminescent Properties

Understanding the Stability of an Unprecedented Si–Be Bond within Quantum Confinement

Assessing the key parameters for efficient sensitized infrared emission from erbium-doped SnO2 films

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