Sensitization of luminescence of wurtzite GaN crystals doped with Eu and the additionally introduced Zn impurity

Krivolapchyuk, V. V.; Мездрогина, М. М.; Kozhanova, Yu. V.; Rodin, S. N.

doi:10.1134/s106378260609003x

Cited by 3 publications

(13 citation statements)

References 7 publications

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“…Upon the introduction of Zn codopants with the formation of (GaN:Eu):Zn crystals, the intensities of the (A 0 , x) and (D 0 , x) emission lines sharply increase, and the intensity of the DAR bands also increases (see spectrum 3 in Fig. 2 in [6]); i.e., we observe the effect of intensification of emission, as in the above case. In [6], the increase in the emission intensity of these crystals was attributed to the fact that an ordered structure composed of pyramids formed at the surface of the crystals.…”

Section: Doping Of Gan Crystals With Eu (Gan:eu)supporting

confidence: 65%

“…1 in [6]) was common for this type of sample: the spectrum exhibited one (D 0 , x) emission line corresponding to an exciton bound at a neutral donor (E = 3.46 eV, FWHM = 120 meV). The DAR band was lacking, and hence, the Eu dopant ion is not an isoelectronic trap.…”

Section: Doping Of Gan Crystals With Eu (Gan:eu)mentioning

confidence: 85%

“…For the crystals with surfaces with the highest degree of morphological homogeneity, the PL spectrum (see curve 1 in Fig. 1 in [6]) involves an emission line in the short-wavelength region of the spectrum (λ = 3470 Å, or E ≈ 3.54 eV), with a small FWHM equal to 47 meV, and a low-intensity (D 0 , x) emission line of an exciton bound at a neutral donor (E = 3.46 eV). The NEPL spectrum of the initial crystal also involves an intense line at λ = 3700-3800 Å with FWHM = 106 meV, corresponding to the DAR emission band (E ≈ 3.26 eV).…”

Section: Doping Of Gan Crystals With Eu (Gan:eu)mentioning

confidence: 99%

“…1 The effect of doping with Eu and Eu + Zn on the PL spectrum of such crystals is that, when doped with Eu, the crystals exhibit new emission lines (FWHM = 83 meV) corresponding to excitons bound not only at neutral donors (line (D 0 , x) at E = 3.461 eV), but also at neutral acceptors (line (A 0 , x) at E = 3.439 eV) and a DAR band with a very low inten-sity (see spectrum 2 in Fig. 2 in [6]); i.e., the Eu dopants in such crystals are isoelectronic traps. Upon the introduction of Zn codopants with the formation of (GaN:Eu):Zn crystals, the intensities of the (A 0 , x) and (D 0 , x) emission lines sharply increase, and the intensity of the DAR bands also increases (see spectrum 3 in Fig.…”

Section: Doping Of Gan Crystals With Eu (Gan:eu)mentioning

confidence: 99%

“…Previously, it was also shown that the introduction of Zn codopats [6,7] led to an intensification of emission of Eu-doped n-GaN ( n-GaN:Eu) crystals in the short-wavelength spectral region, so that the emission intensity became comparable with that of the InGaN/GaN-based quantum well structures.…”

Section: Introductionmentioning

confidence: 99%

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10.1007/s11453-008-2007-8

2010

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By analyzing time-resolved and steady-state photoluminescence spectra, it is established that the spatial distribution of rare-earth ion dopants in wurtzite GaN crystals doped with Sm, Eu, Er, or Tm is governed by the type and concentration of defects in the initial semiconductor matrix as well as by the type of the impurity (its capacity for segregation). Doping with multicharged rare-earth impurities and additionally introduced Zn impurity leads to an intensification of emission. The effect of intensification of emission in the case of n -and p -GaN crystals is considered with the use of the model of isoelectronic traps.

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Section: Doping Of Gan Crystals With Eu (Gan:eu)supporting

confidence: 65%

Section: Doping Of Gan Crystals With Eu (Gan:eu)mentioning

confidence: 85%

Section: Doping Of Gan Crystals With Eu (Gan:eu)mentioning

confidence: 99%

Section: Doping Of Gan Crystals With Eu (Gan:eu)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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10.1007/s11453-008-2007-8

2010

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Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering

2018

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Photoluminescence spectra of intracenter 4f transitions of rare-earth metal dopants in crystalline ZnO films

et al. 2012

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The influence of annealing in the medium of an ionized nitrogen, additionally introduced impu rities, and regimes of post growth annealing on photoluminescence spectra of intracenter 4f transitions of rare earth metal dopants (Ce, Eu, Sm, Er, Tm, Yb) in crystalline ZnO films has been investigated. The films have been prepared using molecular beam epitaxial growth and magnetron sputtering. According to the X ray diffraction analysis, the films have a single crystal structure. It has been shown that the annealing in the medium of an ionized nitrogen, regardless of the method used for producing the ZnO films, leads to signifi cant changes in the photoluminescence spectrum, i.e., to a decrease in the emission intensity and a shift in the position of the emission maximum toward the long wavelength range of the spectrum. The nitrogen con centration has been determined by the nuclear reaction method. It has been revealed that the spectra contain intense emission lines due to the intracenter 4f transitions of rare earth elements (Sm, Er, Tm, Yb) in the crystalline ZnO films prepared by magnetron sputtering, and the intensity of the emission lines increases upon introduction of codopants, namely, Ce and Er.

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Sensitization of luminescence of wurtzite GaN crystals doped with Eu and the additionally introduced Zn impurity

Cited by 3 publications

References 7 publications

10.1007/s11453-008-2007-8

10.1007/s11453-008-2007-8

Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering

Photoluminescence spectra of intracenter 4f transitions of rare-earth metal dopants in crystalline ZnO films

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