Sensitivity of Process Parameters on Pattern Formation of Litho–Cure–Litho–Etch Process

Impact of process parameters on pattern formation in the maskless plasmonic computational lithography

“…5 shows the sensitivity of MPL simulation parameters in Table 1. The most effective factor of each process is used to find the most effective process by Taguchi method [7]. For the parameters of metallic bowtie, insert of Fig.…”

“…where f(t) is a level-set function, k(t) is mean curvature, b is constant value, and H, S, and U are dimensionless parameters [6,7]. For the sovent evaporation-diffusion of prebake, the concentration rate (M) after bake can be determined from.…”

“…and C are Dill's parameters [7]. For PEB model, the acid diffusion equation of the non-chemically-amplified resist (non-CAR) is…”

“…where M is dissolution inhibitor (or PAC) and D H is the acid diffusion coefficient [6,7]. For development model, Mack model and raytrancing model are, respectively,…”

“…where R(M) is development rate, R max (or R min ) is the maximum (or minimum) development rate, M th is the threshold inhibitor concentration, n is the reaction order, b S n is the unit vector of the trace direction, P n is ray position, and R n is the surface evolution rate [6,7]. The imperfection of resist pattern is possibly attributed to the imperfect of aperture structure and the roughness of the metal surface, so that this resist pattern can be further improved by optimizing lithography conditions.…”