Sensitivity Analysis of GaN/AlGaN Quantum Dot Based Led

Abstract

The impact of various geometrical parameters and doping parameters on the performance of GaN/AlGaN quantum dot-based light-emitting diode using 3D numerical simulations have been studied in this work. The parameters are ranked based on their sensitivity coefficients. Four important performance metrics, (i) internal quantum efficiency, (ii) responsivity, (iii) optical gain, and (iv) input power are used for this study. The bottom radius of the quantum dot is found to be the most significant parameter with respect to the internal quantum efficiency and optical gain. Nanocolumn radius is the most significant parameter with respect to Responsivity and input power. The overall ranking suggests that the Nanocolumn radius is the most sensitive parameter.